NESG2101M16-A CEL, NESG2101M16-A Datasheet - Page 7

• Manufacturer Part Number: NESG2101M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2101M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 17GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 2GHz
• Gain: 11dB ~ 13dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 15mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M16
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Remark The graphs indicate nominal characteristics.
25
20
15
10
30
30
25
20
15
10
5
0
5
0
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
1
1
V
f = 1 GHz
V
f = 2 GHz
CE
CE
= 1 V,
= 1 V,
Collector Current I
Collector Current I
MSG
10
10
|S
21e
|S
|
2
C
C
21e
(mA)
(mA)
MSG
|
2
MAG
Data Sheet PU10395EJ03V0DS
MAG
100
100
30
25
20
15
10
5
0
1
V
f = 1 GHz
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
CE
= 2 V,
Collector Current I
MSG
10
|S
NESG2101M16
21e
|
2
C
(mA)
100
7