NE68619-A CEL, NE68619-A Datasheet

TRANSISTOR NPN 2GHZ SC-90

NE68619-A

Manufacturer Part Number
NE68619-A
Description
TRANSISTOR NPN 2GHZ SC-90
Manufacturer
CEL
Datasheet
1.NE68619-T1-A.pdf (12 pages)

Specifications of NE68619-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3V
Frequency - Transition
13GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2dB @ 2GHz
Power - Max
30mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 7mA, 2V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Package / Case
3-XSOF, MiniMold
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
3 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.01 A
Power Dissipation
0.030 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NE68619-T1-A
ELECTRICAL CHARACTERISTICS
FEATURES
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
NEC's NE686 series of NPN epitaxial silicon transistors are
designed for low voltage/low current, amplifier and oscillator
applications. NE686's high f
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
• HIGH GAIN BANDWIDTH PRODUCT: f
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
• LOW NOISE: 1.5 dB AT 2.0 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
DESCRIPTION
R
R
|S
|S
NF
NF
|S
|S
MOUNT PACKAGE STYLES
C
TH(J-C)
I
I
TH(J-A)
h
CBO
EBO
P
21e
21e
f
f
RE 4
FE
21E
21E
T
T
MIN
MIN
T
|
|
2
2
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal of
|
|
2
2
the 3 terminal capacitance bridge.
= 12 dB @ 2 V, 7 mA, 2 GHz
= 11 dB @ 1 V, 5 mA, 2 GHz
Gain Bandwidth Product at
V
Gain Bandwidth Product at
V
Minimum Noise Figure at
V
Minimum Noise Figure at
V
Insertion Power Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance at
V
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance(Junction to Case) °C/W
CE
CE
CE
CE
CE
CE
CE
CB
EIAJ
CB
EB
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2V, I
= 1V, I
= 2 V, I
= 2 V, I
= 5 V, I
= 1 V, I
2
PACKAGE OUTLINE
REGISTERED NUMBER
PART NUMBER
C
C
C
C
C
C
C
E
=7 mA, f = 2.0 GHz
=5 mA, f = 2.0 GHz
= 0 mA, f = 1 MHz
= 7 mA, f = 2.0 GHz
= 5 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 7 mA
C
E
= 0 mA
= 0 mA
HIGH FREQUENCY TRANSISTOR
SURFACE MOUNT NPN SILICON
T
make it an excellent choice for
3
at
1
T
of 15 GHz
°C/W
GHz
GHz
mW
dB
dB
dB
dB
nA
nA
pF
(T
A
= 25°C)
8.5 11
12 15.5
10
10
70
NE68618
2SC5180
1.5
1.5
0.3
18
13
12
140
100
100
833
2.0
2.0
0.5
30
8.5
10
70
8
7
NE68619
2SC5181
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
10.5
1.5
1.5
0.4
19
13
12
9
1250
140
100
100
2.0
2.0
0.6
30
California Eastern Laboratories
7.5
7.5
70
7
7
NE68630
2SC5179
8.5
1.5
1.5
8.5
0.4
30
9
9
140
100
100
833
2.0
2.0
0.6
30
19 (3 PIN ULTRA SUPER
33 (SOT 23 STYLE)
7.5
8.5
10
70
39R (SOT 143R STYLE)
7
NE68633
2SC5177
NE686
SERIES
1.5
1.5
8.5
0.5
MINI MOLD)
33
13
12
9
140
100
100
625
2.0
2.0
0.6
30
10.5 13.5
8.5
9.5 11.5
7.5 10.5
NE68639/39R
2SC5178/78R
70
39/39R
1.5
1.5
0.3
12
140
100
100
625
2.0
2.0
0.5
30

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NE68619-A Summary of contents

Page 1

... Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge GHz T 18 (SOT 343 STYLE) 30 (SOT 323 STYLE) 39 (SOT 143 STYLE 25°C) A NE68618 NE68619 2SC5180 2SC5181 18 19 GHz 12 15 GHz ...

Page 2

... NE68619 (T = 25°C) A TYPICAL NOISE PARAMETERS UNITS RATINGS V 5 FREQ. (MHz 500 800 1000 150 °C 1500 -65 to +150 ° ...

Page 3

... NE68633, NE68639 D.C. POWER DERATING CURVE 100 100 Ambient Temperature, T (TA = 25°) FREE AIR 150 (°C) A FREE AIR 150 (°C) A NE68619 D.C. POWER DERATING CURVE FREE AIR 100 100 Ambient Temperature, T (°C) A COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 20 200 µA 180 µA 15 160 µ ...

Page 4

TYPICAL PERFORMANCE CURVES NE68618 INSERTION GAIN vs. COLLECTOR CURRENT GHz Collector Current D.C. CURRENT GAIN vs. COLLECTOR CURRENT 500 200 100 50 ...

Page 5

TYPICAL SCATTERING PARAMETERS GHz 0.1 GHz 1 0.1 GHz 5 GHz -.2 -.4 -.6 NE68618 -1.5 -. ...

Page 6

... NE686 SERIES TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68619 FREQUENCY S 11 GHz MAG ANG 0.1 0.978 -5.400 0.4 0.959 -21.100 0.8 0.897 -41.100 1.0 0.861 -50.000 1.5 0.758 -72.300 2.0 0.670 -92.200 2.5 0.591 -110.700 3.0 0.517 -129 ...

Page 7

TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68630 1.0 mA ...

Page 8

TYPICAL SCATTERING PARAMETERS GHz 1 0.1 GHz GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68633 ...

Page 9

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 -0.05 0.3 0.9 ± 0 0.1 LEAD CONNECTIONS 1. Collector 2. Emitter ...

Page 10

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 -0.1 ...

Page 11

... ORDERING INFORMATION PART NUMBER QUANTITY NE68618-T1-A 3000 NE68619-T1-A 3000 NE68630-T1 3000 NE68633-T1 3000 NE68639-T1 3000 NE68639R-T1 3000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & ...

Page 12

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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