NE68518-A CEL, NE68518-A Datasheet

TRANSISTOR NPN 2GHZ SOT343

NE68518-A

Manufacturer Part Number
NE68518-A
Description
TRANSISTOR NPN 2GHZ SOT343
Manufacturer
CEL
Datasheet
1.NE68519-T1-A.pdf (18 pages)

Specifications of NE68518-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Gain
8.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
NEC's family of high frequency, low cost, surface mount
devices are well suited for portable wireless communications
and cellular radio applications.
The NE685 series of high f
very low voltage/low current, low noise applications. These
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT: f
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
R
R
|S
NF
MAG
C
TH(J-C)
G
I
I
TH(J-A)
h
CBO
EBO
P
21E
f
RE 4
FE
T
NF
MIN
T
|
SILICON HIGH FREQUENCY TRANSISTOR
2
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW≤350 μs, duty cycle ≤2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
Gain Bandwidth Product at
V
Minimum Noise Figure at
V
Associated Gain at
V
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance at
V
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance(Junction to Case) °C/W
Maximum Available Gain at
CE
CE
CE
CE
CE
CE
CB
EIAJ
CB
EB
= 3V, I
= 3 V, I
= 3V, I
= 3 V, I
= 3V, I
= 3 V, I
= 3 V, I
= 5 V, I
= 1 V, I
PACKAGE OUTLINE
2
REGISTERED NUMBER
PART NUMBER
C
C
C
C
C
C
E
= 10 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
=10 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 10 mA, f = 2.0 GHz
= 10 mA
= 0 mA, f = 1 MHz
E
C
= 0 mA
= 0 mA
T
(12 GHz) devices is suitable for
3
at
NEC'S SURFACE MOUNT NPN
1
T
of 12 GHz
°C/W
GHz
mW
dB
dB
dB
dB
μA
μA
pF
(T
A
= 25°C)
75 110 150
9
NE68518
2SC5015
1.5
0.3
8.5
18
12
11
12
150
833
200
2.5
0.1
0.1
0.5
75
7
NE68519
2SC5010
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
110 150
1.5
7.5
0.4
19
12
11
9
1000
125
200
2.5
0.1
0.1
0.7
California Eastern Laboratories
75
7
NE68530
2SC4959
110 150
1.5
8.5
0.4
30
12
10
7
150
833
200
2.5
0.1
0.1
0.7
19 (3 PIN ULTRA SUPER
33 (SOT 23 STYLE)
39R (SOT 143R STYLE)
75
7
NE68533
2SC4955
NE685
SERIES
10.5
110 150
1.5
0.4
MINI MOLD)
33
12
7
8
180
620
200
2.5
0.1
0.1
0.7
NE68539/39R
75
9
2SC4957
110 150
1.5
7.5
0.3
39
12
11
10
180
620
200
2.5
0.1
0.1
0.5

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NE68518-A Summary of contents

Page 1

... Electronic Industrial Association of Japan. 3. Pulsed measurement, PW≤350 μs, duty cycle ≤2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge GHz T 18 (SOT 343 STYLE) 30 (SOT 323 STYLE) 39 (SOT 143 STYLE 25°C) A NE68518 NE68519 2SC5015 2SC5010 18 19 GHz 1.5 2.5 1 ...

Page 2

... Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Junction Temperature J T Storage Temperature STG Note: 1.Operation in excess of any one of these parameters may result in permanent damage. NE68518 TYPICAL NOISE PARAMETERS FREQ OPT A (MHz) (dB) (dB) MAG 500 1 ...

Page 3

NE68533 TYPICAL NOISE PARAMETERS FREQ Γ OPT A (MHz) (dB) (dB) MAG 500 0.9 12.03 0.76 800 1.1 10.22 0.72 1000 1.3 9.24 0.67 V 1.0 V ...

Page 4

... NE685 SERIES TYPICAL PERFORMANCE CURVES NE68518, NE68530 D.C. POWER DERATING CURVE 200 180 INFINITE HEAT SINK FREE AIR 100 100 Ambient Temperature, T NE68533, NE68539 D.C. POWER DERATING CURVE 200 180 INFINITE HEAT SINK FREE AIR 100 0 38 100 Ambient Temperature, T NOISE FIGURE vs ...

Page 5

... TYPICAL SCATTERING PARAMETERS GHz . 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68518 FREQUENCY S 11 GHz MAG ANG 0.1 0.995 -7.200 0.4 0.941 -29.200 0.8 0.844 -56.800 1.0 0.783 -69.300 1.5 0.644 -99.500 2.0 0.542 -126.400 2.5 0.469 -152.900 3.0 0.421 -179.100 1.0 mA ...

Page 6

NE685 SERIES TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68519 ...

Page 7

TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68530 0.5 mA ...

Page 8

TYPICAL SCATTERING PARAMETERS GHz 1 -.2 4 GHz -.4 -.6 -1.5 NE68533 -. 0 0.5 mA ...

Page 9

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -.8 -1 NE68539 0.5 mA ...

Page 10

... NE68518 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 VTF VAR 12.4 ITF IKR Infinity PTF ISC 1.3 XTB RB 10 XTI RBM 8.34 KF IRB ...

Page 11

NE68519 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7.0e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.90e- 2. XTF NR 1.08 VTF VAR ...

Page 12

NE685 SERIES NE68530 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 ...

Page 13

NE68533 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 VTF VAR ...

Page 14

NE685 SERIES NE68539 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 ...

Page 15

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 0.65 2.0 ± 0.2 0.60 0. +0.10 0.4 -0.05 0.3 0.9 ± 0 0.1 PACKAGE OUTLINE 19 ...

Page 16

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 ...

Page 17

... ORDERING INFORMATION PART NUMBER QUANTITY NE68518-T1-A 3000 NE68519-T1-A 3000 NE68530-T1-A 3000 NE68533-T1-A 3000 NE68539-T1-A 3000 NE68539R-T1 3000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & ...

Page 18

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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