NESG2021M16-A CEL, NESG2021M16-A Datasheet - Page 4

• Manufacturer Part Number: NESG2021M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2021M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 18dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

4
1 000
1 000
Remark The graphs indicate nominal characteristics.
100
100
10
10
0.1
0.1
COLLECTOR CURRENT
COLLECTOR CURRENT
DC CURRENT GAIN vs.
DC CURRENT GAIN vs.
Collector Current I
Collector Current I
1
1
C
C
10
10
(mA)
(mA)
V
V
CE
CE
= 1 V
= 3 V
Data Sheet PU10393EJ03V0DS
100
100
1 000
100
10
0.1
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current I
1
C
NESG2021M16
10
(mA)
V
CE
= 2 V
100