NE68139-A CEL, NE68139-A Datasheet - Page 15

• Manufacturer Part Number: NE68139-A
• Description: TRANSISTOR NPN 1GHZ SOT-143
• Manufacturer: CEL

Specifications of NE68139-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.065 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE68139-T1-A

Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
NE68133 NONLINEAR MODEL
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
ISE
IKR
ISC
IRB
IKF
NF
NE
BR
NR
RE
RB
BF
NC
RC
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
0.055
1.02
0.77
0.27
185
Q1
2.1
0.6
3.7
0.5
15
12
1
1
0
8
2
Parameters
XCJC
MJC
MJS
CJS
XTF
VTF
PTF
XTB
VJS
XTI
ITF
EG
FC
TR
KF
TF
AF
Base
C
BEPKG
L
BX
14e-12
0.3e-9
0.56
0.75
1.11
Q1
0.5
0.1
25
0
0
0
3
0
0
3
0
1
(1)
L
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
CE
C
Q1
CEPKG
L
CX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
Parameters
time
capacitance
inductance
resistance
voltage
current
Parameter
Collector
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.1 to 8.0 GHz
V
7/97
CE
= 1 V to 8 V, I
NE681 SERIES
C
seconds
farads
henries
ohms
volts
amps
Units
0.07e-12
0.01e-12
0.01e-12
0.2e-12
0.2e-12
= 1 mA to 30 mA
0.9e-9
1.2e-9
0.3e-9
0.6e-9
0.3e-9
68133