NE687M03-A CEL, NE687M03-A Datasheet

NE687M03-A

Manufacturer Part Number

NE687M03-A

Description

TRANSISTOR NPN 2GHZ SC-90

Manufacturer

CEL

Datasheet

1.NE687M03-T1-A.pdf (4 pages)

Specifications of NE687M03-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

14GHz

Noise Figure (db Typ @ F)

1.3dB ~ 2dB @ 2GHz

Power - Max

90mW

Dc Current Gain (hfe) (min) @ Ic, Vce

70 @ 20mA, 2V

Current - Collector (ic) (max)

30mA

Mounting Type

Surface Mount

Package / Case

3-XSOF, MiniMold

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.03 A

Power Dissipation

90 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS

FEATURES

DESCRIPTION

NEC's NE687M03 transistor is designed for low noise, high

gain, and low cost requirements. This high f

for very low voltage/low current designs for portable wireless

communications and cellular radio applications. NEC's new

low proﬁle/ﬂat lead style "M03" package is ideal for today's

portable wireless applications. The NE687 is also available in

six different low cost plastic surface mount package styles.

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

• NEW M03 PACKAGE:

• HIGH GAIN BANDWIDTH PRODUCT:

• LOW NOISE FIGURE:

SYMBOLS

• Smallest transistor outline package available

• Low proﬁle/0.59 mm package height

• Flat lead style for better RF performance

NF = 1.4 dB at 2 GHz

= 14 GHz

CBO

EBO

21E

Gain Bandwidth at V

Noise Figure at V

Insertion Power Gain at V

Forward Current Gain at V

Collector Cutoff Current at V

Emitter Cutoff Current at V

Feedback Capacitance at V

PARAMETERS AND CONDITIONS

= 1 V, I

= 2 V, I

EIAJ

NPN SILICON TRANSISTOR

= 1 V, I

= 2 V, I

PACKAGE OUTLINE

REGISTERED NUMBER

part is well suited

= 2 V, I

PART NUMBER

= 3 mA, f = 2 GHz

= 1 V, I

= 3 mA, f = 2 GHz

= 2 V, I

= 1 V, I

= 2 V, I

= 5 V, I

= 10 mA, f = 2 GHz

= 20 mA, f = 2 GHz

= 10 mA, f = 2 GHz

= 25°C)

= 20 mA

= 0

= 0, f = 1 MHz

= 0

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

OUTLINE DIMENSIONS

1.4 ±0.1

California Eastern Laboratories

(0.9)

0.59±0.05

UNITS

0.45

GHz

NEC's

μA

0.2

PACKAGE OUTLINE M03

+0.1

-0

MIN

1.2±0.05

0.8±0.1

8.5

NE687M03

(Units in mm)

NE687M03

2SC5436

M03

TYP

1.3

9.0

0.4

0.15

0.3

-0.05

+0.1

-0

MAX

130

0.1

0.8

Related parts for NE687M03-A

NE687M03-A Summary of contents

Page 1

... T • LOW NOISE FIGURE 1 GHz DESCRIPTION NEC's NE687M03 transistor is designed for low noise, high gain, and low cost requirements. This high f for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low proﬁle/ﬂat lead style "M03" package is ideal for today's portable wireless applications ...

Page 2

... Collector to Emmiter Voltage, V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.5 Base to Emmiter Voltage, V ORDERING INFORMATION 25°C) A UNITS RATINGS PART NUMBER V 5 NE687M03 NE687M03-T1 °C 150 °C -65 to +150 (T = 25° µA B (V) CE 1.0 (V) BE QUANTITY D.C. CURRENT GAIN vs. COLECTOR CURRENT ...

Page 3

... NE687M03 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 302.3e-18 MJC BF 104 XCJC NF 1.038 CJS VAF 10 VJS IKF 0.370 MJS ISE 1e 31. 17.54 XTF NR 1.023 VTF VAR 30 ITF IKR 8.369e-3 PTF ISC 81.93e- 4.986 EG RE 0.80 XTB RB 11.10 XTI RBM 2 ...

Page 4

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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