NE85633-R25-A CEL, NE85633-R25-A Datasheet - Page 17

• Manufacturer Part Number: NE85633-R25-A
• Description: TRANSISTOR NPN 1GHZ SOT-23
• Manufacturer: CEL

Specifications of NE85633-R25-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 1GHz
• Gain: 9dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE85619 NONLINEAR MODEL
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Parameters
RBM
VAR
CJE
MJE
CJC
VAF
VJE
ISE
ISC
IRB
VJC
IKF
NR
NC
RC
BR
IKR
RE
RB
BF
NF
NE
IS
3.2e-15
1.96e-4
2.8e-12
1.1e-12
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
Base
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
L
BX
(1)
10e-12
1e-9
0.55
0.75
1.11
0.3
0.5
0.2
Q1
10
L
0
0
6
0
0
3
0
1
B
C
C
CBPKG
CB
Emitter
L
UNITS
L
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
E
EX
C
CE
Parameter
time
capacitance
inductance
resistance
voltage
current
Parameters
C
C
L
L
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
Q1
V
0.05 to 3.0 GHz
CE
C
L
CEPKG
CX
= 2.5 V to 10 V, I
Collector
C
= 0.3 mA to 10 mA
0.087e-12
0.16e-12
1.84e-9
0.56e-9
0.08e-12
0.39e-12
0.19e-9
0.19e-9
0.19e-9
NE85619
NE856 SERIES
seconds
farads
henries
ohms
volts
amps
Units