NE85633-R24-A CEL, NE85633-R24-A Datasheet - Page 23

• Manufacturer Part Number: NE85633-R24-A
• Description: TRANSISTOR NPN 1GHZ SOT-23
• Manufacturer: CEL

Specifications of NE85633-R24-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 1GHz
• Gain: 9dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

OUTLINE DIMENSIONS
1. Emitter
2. Base
3. Collector
1. Emitter
2. Base
3. Collector
2.0 ± 0.2
2.9 ± 0.2 0.95
1.1 to 1.4
0.9 ± 0.1
1.9
1.3
φ 0.5
1.27
0.8
0.65
0.15
PACKAGE OUTLINE 30
PACKAGE OUTLINE 33
PACKAGE OUTLINE 32
φ 5.2 MAX
B E C
2
1
2
1
(SOT-323)
(SOT-23)
2.8
(TO-92)
1.25 ± 0.1
1.5
2.1 ± 0.2
(Units in mm)
+0.2
-0.3
+0.2
-0.1
0 to 0.1
2.54
0 to 0.1
5.5 MAX
14.0 MIN
3
3
4.2 MAX
1.77 MAX
MARKING
0.16
0.65
(ALL LEADS)
0.4
+0.10
-0.06
0.15
0.3
(ALL LEADS)
+0.10
+0.10
-0.05
-0.15
+0.1
+0.10
-0.05
-0.05
0.6
0.8
1
2
0.42±0.06
0.47±0.06
0.42±0.06
1
RECOMMENDED P.C.B. LAYOUT
2
RECOMMENDED P.C.B. LAYOUT
0.41
1.0
E
C
B
PACKAGE OUTLINE 33
0.8
1.5
1.5
+0.03
PACKAGE OUTLINE 34
-
0.05
PACKAGE OUTLINE 30
0.8 MIN
2.4
(SOT-89)
1.7
4.0±0.25
3
1
2
2.5±0.1
1.6±0.2
NE856 SERIES
1.5±0.1
3
3
4.5±0.1
0.95
0.65
1.9
1.3