NE685M03-A CEL, NE685M03-A Datasheet

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NE685M03-A

Manufacturer Part Number
NE685M03-A
Description
TRANSISTOR NPN 2GHZ SC-90
Manufacturer
CEL
Datasheet
1.NE685M03-T1-A.pdf (4 pages)

Specifications of NE685M03-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Power - Max
125mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
3-XSOF, MiniMold
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.03 A
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
The NEC's NE685M03 transistor is designed for low noise,
high gain, and low cost requirements. This high f
suited for very low voltage/low current designs for portable
wireless communications and cellular radio applications. NEC's
new low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
Notes:
• NEW M03 PACKAGE:
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
SYMBOLS
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
f
NF = 1.5 dB at 2 GHz
T
|S
C
= 12 GHz
h
I
I
NF
CBO
EBO
21E
FE 2
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
f
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
CE
PARAMETERS AND CONDITIONS
= 3 V, I
CE
EIAJ
NPN SILICON TRANSISTOR
= 3 V, I
CE
PACKAGE OUTLINE
1
CE
EB
REGISTERED NUMBER
C
CB
CB
PART NUMBER
= 3 V, I
= 3 mA, f = 2 GHz
= 3 V, I
= 1 V, I
C
= 3 V, I
= 5 V, I
= 10 mA, f = 2 GHz
T
(T
part is well
C
A
C
C
= 10 mA, f = 2 GHz
E
= 25°C)
= 10 mA
E
= 0
= 0, f = 1 MHz
= 0
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
1.4 ±0.1
(0.9)
0.59±0.05
California Eastern Laboratories
0.45
0.45
UNITS
0.2±0.1
GHz
dB
dB
µA
µA
pF
PACKAGE OUTLINE M03
1
2
1.2±0.05
0.8±0.1
MIN
75
7
NE685M03
(Units in mm)
NE685M03
2SC5435
3
M03
TYP
1.5
0.4
12
9
0.3±0.1
0.15
-0.05
+0.1
MAX
140
2.5
0.1
0.1
0.7

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NE685M03-A Summary of contents

Page 1

... T • LOW NOISE FIGURE 1 GHz DESCRIPTION The NEC's NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high f suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications ...

Page 2

... Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1.0 2.0 3.0 4.0 Collector to Emitter Voltage, V ORDERING INFORMATION PART NUMBER QUANTITY NE685M03-A NE685M03-T1 25°C) A UNITS RATINGS 125 150 °C -65 to +150 ° 25° ...

Page 3

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & ...

Page 4

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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