NE663M04-A CEL, NE663M04-A Datasheet - Page 4

• Manufacturer Part Number: NE663M04-A
• Description: TRANSISTOR NPN 2GHZ M04
• Manufacturer: CEL

Specifications of NE663M04-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.7dB @ 2GHz
• Gain: 15dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 190 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
25
20
15
10
30
25
20
15
10
40
35
30
25
20
15
10
-5
5
0
5
0
-15
5
0
0.1
1
V
f = 1 GHz
CE
V
f = 1 GHz
OUTPUT POWER COLLECTOR
CE
CURRENT vs. INPUT POWER
= 2 V
-10
= 2 V
Collector Current, I
Frequency, f (GHz)
Input Power P
-5
MSG
1.0
10
0
|S
|S
21e
21e
in
MAG
|
|
2
2
(dBm)
C
5
(mA)
P
I
V
I
out
C
C
CE
MSG
= 50 mA
10
= 2 V
MAG
10.0
100
15
150
125
100
75
50
25
0
(T
A
= 25°C)
MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,
30
25
20
15
10
25
20
15
10
-5
5
0
5
0
-15
1
V
f = 2 GHz
CE
V
f = 2 GHz
OUTPUT POWER COLLECTOR
CE
CURRENT vs. INPUT POWER
= 2V
-10
= 2 V
Collector Current, l
Input Power P
-5
10
0
MAG
P
out
MAG/MSG (dB) = 2.0 GHz
S21 (dB) = 2.0 GHz
in
I
C
(dBm)
C
5
(mA)
10
100
15
150
125
100
75
50
25
0