NE696M01-A CEL, NE696M01-A Datasheet

TRANSISTOR NPN 2GHZ SOT-363

NE696M01-A

Manufacturer Part Number
NE696M01-A
Description
TRANSISTOR NPN 2GHZ SOT-363
Manufacturer
CEL
Datasheet

Specifications of NE696M01-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1.6dB @ 2GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
FEATURES
• HIGH f
• LOW NOISE FIGURE:
• HIGH GAIN:
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT
DESCRIPTION
ELECTRICAL CHARACTERISTICS
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
SYMBOLS
|S
14 GHz TYP at 3 V, 10 mA
NF = 1.6 dB TYP at 2 GHz
|S
PERFORMANCE
h
Cre
I
I
CBO
NF
EBO
21E
21E
FE 1
f
T
2
|
2
|
2
T
= 14 dB TYP at 2 GHz
:
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Gain Bandwidth at V
Feedback Capacitance at V
Insertion Power Gain at V
Noise Figure at V
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
CE
PART NUMBER
= 3 V, I
CE
= 3 V, I
CE
CE
EB
C
CB
CB
= 3 V, I
FREQUENCY TRANSISTOR
= 3 V, I
= 3 mA, f = 2 GHz
= 1 V, I
= 3 V, I
C
= 5 V, I
NEC's NPN SILICON HIGH
= 10 mA, f = 2 GHz
C
C
C
= 10 mA, f = 2 GHz
E
E
= 0
= 10 mA
= 0, f = 1 MHz
(T
= 0
A
= 25°C)
UNITS
GHz
µA
µA
pF
dB
dB
OUTLINE DIMENSIONS
PIN OUT
1. Emitter
2. Emitter
3. Base
Note:
Pin 3 is identified with a circle on the bottom of the package.
2.0 ± 0.2
0.9 ± 0.1
4. Emitter
5. Emitter
6. Collector
California Eastern Laboratories
MIN
1.3
80
0.7
0.65
PACKAGE OUTLINE M01
3
2
1
SIDE VIEW
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
NE696M01
0 ~ 0.1
M01
TYP
0.15
120
1.6
14
14
(Units in mm)
NE696M01
6
5
4
0.2 (All Leads)
0.15
+0.10
- 0.05
MAX
160
0.1
0.1

Related parts for NE696M01-A

NE696M01-A Summary of contents

Page 1

... Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 3. For Tape and Reel version use part number NE696M01-T1, 3K per reel. NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS PIN OUT 1 ...

Page 2

... PART NUMBER QUANTITY NE696M01-T1-A 3000 TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 Ambient Temperature, T COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1.0 2.0 Collector to Emitter Voltage NE696M01 (T = 25°C) A TYPICAL NOISE PARAMETERS UNITS RATINGS V 9 FREQ. (GHz 1.0 1.4 mW 150 1.7 150 ° ...

Page 3

... TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30.0m IC 2.00m /div 0.00 0.00 VCE (V) Collector to Emitter Voltage, V TYPICAL SCATTERING PARAMETERS NE696M01 FREQUENCY S 11 (GHz) MAG ANG 0.40 0.728 -52.30 0.50 0.684 -64.20 0.60 0.639 -73.80 0.70 0.594 -83.40 0.80 0.556 -92.50 ...

Page 4

... TYPICAL SCATTERING PARAMETERS 1 0.8 1.5 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.4 -0.6 -1.5 -0.8 NE696M01 - FREQUENCY S 11 GHz MAG ANG 0.40 0.941 -25.2 0.80 0.874 -49.7 1.00 0.833 -61.1 2.00 0.610 -119.1 2.50 0.536 -150.6 3.00 0.502 176.8 4 ...

Page 5

... TYPICAL SCATTERING PARAMETERS NE696M01 FREQUENCY S 11 (GHz) MAG ANG 0.40 0.765 -43.9 0.80 0.596 -79.7 1.00 0.525 -94.2 2.00 0.335 -160.2 2.50 0.323 166.2 3.00 0.353 137.5 4.00 0.456 99.2 5.00 0.533 78.9 6.00 0.583 65.7 Note: 1. Gain Calculation ± When K ≤ 1, MAG is undefined and MSG values are used. MSG = ...

Page 6

... NE696M01 NONLINEAR MODEL SCHEMATIC BASE BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 119 XCJC NF 1.06 CJS VAF 20.5 VJS IKF 0.18 MJS ISE 1e- 6.5 XTF NR 1.08 VTF VAR 18 ITF IKR 0.015 PTF ISC 1.23 XTB RB 11 XTI RBM 2.5 KF IRB ...

Page 7

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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