NE85630-R25-A CEL, NE85630-R25-A Datasheet - Page 18

• Manufacturer Part Number: NE85630-R25-A
• Description: TRANSISTOR NPN 1GHZ SOT-323
• Manufacturer: CEL

Specifications of NE85630-R25-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
• Gain: 6dB ~ 12dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE85630 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.96e-4
2.8e-12
1.1e-12
32e-16
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
Base
C
BEPKG
L
10e-12
BX
1e-9
0.55
0.75
1.11
0.3
0.5
Q1
0.2
10
0
0
6
0
0
3
0
1
(1)
L
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
CE
C
CEPKG
L
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
CX
Q1
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
Collector
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.05 to 3.0 GHz
V
10/25/96
CE
= 2.5 V to 10 V, I
NE85630
NE856 SERIES
0.09e-12
0.16e-12
1.4e-9
0.93e-9
0.12e-12
0.16e-12
0.04e-12
0.2e-9
0.2e-9
0.2e-9
ohms
amps
seconds
farads
henries
volts
Units
C
= 0.3 mA to 10 mA