NE85633L-A CEL, NE85633L-A Datasheet

TRANSISTOR NPN 1GHZ SOT-23

NE85633L-A

Manufacturer Part Number
NE85633L-A
Description
TRANSISTOR NPN 1GHZ SOT-23
Manufacturer
CEL
Datasheet

Specifications of NE85633L-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 1GHz
Gain
9dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.1 A
Power Dissipation
0.2 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE85633L-A
Manufacturer:
CEL
Quantity:
20 000
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST
DESCRIPTION
Date Published: June 28, 2005
FEATURES
NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
wide dynamic range and excellent linearity. The NE856 series
offers excellent performance and reliability at low cost. This is
achieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
package for high frequency applications. It is also available in
several low cost plastic package styles.
f
1.1 dB at 1 GHz
T
= 7 GHz
2.0
4.0
3.5
3.0
2.5
1.5
1.0
0.4 0.5
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
NOISE FIGURE AND GAIN
G
Frequency, f (GHz)
A
vs. FREQUENCY
V
CC
1.0
NE85600
= 10 V, I
MSG
C
7 mA
2
NF
MIN
3
FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH
MAG
4
5
10
15
20
5
18 (SOT 343 STYLE)
00 (CHIP)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
32 (TO-92)
NE856 SERIES
NPN SILICON RF TRANSISTOR
35 (MICRO-X)
34 (SOT 89 STYLE)
39R (SOT 143R STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
33 (SOT 23 STYLE)

Related parts for NE85633L-A

NE85633L-A Summary of contents

Page 1

... Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization sys- tem and their direct nitride passivated base surface process. ...

Page 2

ELECTRICAL CHARACTERISTICS PART NUMBER 1 EIAJ REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX f Gain Bandwidth Product ...

Page 3

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Junction Temperature J T Storage Temperature STG Notes: 1. Operation in excess ...

Page 4

TYPICAL PERFORMANCE CURVES NE85634 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY 25 20 MAG 21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 V ...

Page 5

TYPICAL PERFORMANCE CURVES NE85633 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 15 2 |S21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) NE85600 TYPICAL NOISE ...

Page 6

NE85632 TYPICAL NOISE PARAMETERS FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.1 0.20 1000 1.6 30.72 0.34 NE85633 TYPICAL NOISE PARAMETERS FREQ Γ ...

Page 7

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 -j10 -j25 NE85600 -j50 FREQUENCY S 11 (MHz) MAG ANG 100 0.881 -40.9 200 0.833 -75.0 500 0.803 -129.8 ...

Page 8

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85618 -0 FREQUENCY S 11 (MHz) MAG ...

Page 9

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.2 -0.4 NE85619 -0 FREQUENCY S 11 (MHz) MAG ANG 50 ...

Page 10

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 0.8 0.6 0.4 S 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85630 -0 2 FREQUENCY S 11 (MHz) MAG ANG 50 0.931 ...

Page 11

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85632 FREQUENCY S 11 (MHz) MAG ANG 100 0.71 -50 ...

Page 12

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85633 FREQUENCY S 11 (MHz) MAG ...

Page 13

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85634 FREQUENCY S 11 (MHz) MAG ANG 100 0.714 -42.6 ...

Page 14

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85635 FREQUENCY S 11 (MHz) MAG ANG 100 ...

Page 15

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85639 FREQUENCY S 11 (MHz) MAG ...

Page 16

... XTB RB 4.16 XTI RBM 3.6 KF IRB 1.96e CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data CBPKG CEPKG L C BEPKG ...

Page 17

... XTI RBM 3.6 KF IRB 1.96e CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. C CBPKG Emitter (1) UNITS Parameter Q1 time ...

Page 18

... XTI RBM 3.6 KF IRB 1.96e CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. C CBPKG CEPKG L C BEPKG Emitter (1) ...

Page 19

... XTI RBM 3.6 KF IRB 1.96e CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. C CBPKG CEPKG L C BEPKG Emitter ...

Page 20

... CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. CCB_PKG 0.05pF 0.09pF LC 0.45nH CCB 68100 RB_PKG LB_PKG LB CCE 0.16pF 0.77nH ...

Page 21

... XTB RB 4.16 XTI RBM 3.6 KF IRB 1.96e CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data CBPKG CEPKG BEPKG L EX ...

Page 22

OUTLINE DIMENSIONS (Units in mm) NE85600 (CHIP) 0.35 0.30 0.22 BASE EMITTER 0.07φ (Chip Thickness: 140 to 160 μm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 ...

Page 23

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 2 0.65 2.0 ± 0.2 1 MARKING 1. Emitter 0.15 2. Base 3. Collector 0.9 ± 0 0.1 PACKAGE OUTLINE 32 ...

Page 24

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0. 45˚ E 2.55±0.2 φ2.1 +0.06 0.1 -0.04 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0 2.9 ± 0.2 0.95 0.85 ...

Page 25

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

Page 26

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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