AT-41586-TR1G Avago Technologies US Inc., AT-41586-TR1G Datasheet - Page 2

• Manufacturer Part Number: AT-41586-TR1G
• Description: TRANS NPN BIPO 12V 60MA 86-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41586-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 8dB ~ 17dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (86 Plastic)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 60mA
• Dc Current Gain Hfe: 150
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AT-41586 Absolute Maximum Ratings
Electrical Specifications, T
Figure 2. AT-41586 Optimum Noise Figure and
Associated Gain vs. Collector Current at V
V, f = 2.0 GHz.
Note:
1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices. ”
2
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
3. See MEASUREMENTS section, “Thermal Resistance, ” for more information.
CASE
Symbol
|S
16
14
12
10
G
P
NF
I
I
h
CBO
0
G
21E
EBO
Symbol
f
1dB
1dB
FE
T
= 25°C.
A
V
V
V
T
o
P
CBO
CEO
|
EBO
I
T
STG
2
C
T
j
10
Parameters and Test Conditions
Optimum Noise Figure: I
Gain @ NF
Insertion Power Gain: I
Power Output @ 1 dB Gain Compression: I
1 dB Compressed Gain: I
Gain Bandwidth Product: I
Forward Current Transfer Ratio: I
Collector Cutoff Current: V
Emitter Cutoff Current: V
NF
G
O
A
I (mA)
C
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
20
3
0
: I
C
A
= 10 mA
0
= 25°C,
CE
= 8
C
= 25 mA
[2]
V
4
2
0
C
EB
C
CE
= 25 mA
= 10 mA
CB
= 1 V
C
[1]
= 8 V
= 25 mA
= 8 V
Figure 3. AT-41586 P
Current at V
C
= 10 mA
20
1 8
16
14
12
10
8
6
4
2
0
10
CE
G
P
1dB
1dB
= 8 V, f = 2.0 GHz.
C
Units
= 25 mA
mW
mA
°C
°C
V
V
V
COLLECTOR CURRENT
1dB
20
and G
1dB
Maximum
-65 to 150
vs. Collector
Absolute
30
500
150
1.5
20
12
60
[1]
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
40
θ
Figure 4. AT-41586 Insertion Power Gain vs. Col-
lector Current and Frequency at 25°C, V
Thermal Resistance:
20
1 5
10
5
0
dBm
GHz
0
Unit
dB
dB
dB
dB
µA
µA
jc
5
=165°C/W
Min.
30
1 0
I (mA)
[3]
C
2
4.0 GHz
1.0 GHz
2.0 GHz
17.0
12.5
17.0
11.0
18.0
13.0
Typ.
150
1.4
1.7
3.0
8.0
8.0
5
30
CE
Max.
270
= 8 V.
0.2
1.0
40