NESG2030M04-A CEL, NESG2030M04-A Datasheet

NESG2030M04-A

Manufacturer Part Number

NESG2030M04-A

Description

TRANS NPN 2GHZ SOT-343

Manufacturer

CEL

Datasheet

1.NESG2030M04-T2-A.pdf (10 pages)

Specifications of NESG2030M04-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

2.3V

Frequency - Transition

60GHz

Noise Figure (db Typ @ F)

0.9dB ~ 1.1dB @ 2GHz

Gain

16dB

Power - Max

80mW

Dc Current Gain (hfe) (min) @ Ic, Vce

200 @ 5mA, 2V

Current - Collector (ic) (max)

35mA

Mounting Type

Surface Mount

Package / Case

SC-70-4, SC-82-4, SOT-323-4, SOT-343

Continuous Collector Current

35 mA

Emitter- Base Voltage Vebo

1.2 V

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Power Dissipation

80 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS

Notes:

DESCRIPTION

NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of

60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides

a device with a usable current range of 250 μA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.

NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal

choice for LNA and oscillator requirements in all mobile communication systems.

Date Published: June 22, 2005

• SiGe TECHNOLOGY:

• LOW NOISE FIGURE:

• HIGH MAXIMUM STABLE GAIN:

• NEW LOW PROFILE M04 PACKAGE:

FEATURES

NF = 0.9 dBm at 2 GHz

MSG = 20 dB at 2 GHz

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

= 60 GHz Process

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to

4. MSG = S

SYMBOLS

the guard pin.

MSG

OIP

CBO

EBO

21E

1dB

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current Gain

Reverse Transfer Capacitance

Noise Figure at V

Associated Gain at V

Maximum Stable Gain

Insertion Power Gain at V

Output Power at 1 dB compression point

Third Order Intercept Point, V

= 2 V, I

NPN SiGe HIGH FREQUENCY TRANSISTOR

= 20 mA, f = 2 GHz

PARAMETERS AND CONDITIONS

EIAJ

at V

= 2 V, I

PACKAGE OUTLINE

REGISTERED NUMBER

at V

= 2 V, I

PART NUMBER

= 2 V, I

= 5 mA, f = 2 GHz, Z

= 0.5 V, I

= 25°C)

= 2 V, I

= 5V, I

at V

= 2 V, I

= 5 mA, f = 2 GHz, Z

= 5 mA

= 20 mA, f = 2 GHz

= 2 V, I

= 0

= 20 mA, f = 2 GHz

= 0

= 20 mA, f = 2 GHz

= 0 mA, f = 1 GHz

= Z

OPT

M04

OPT

NESG2030M04

NPN SiGe RF TRANSISTOR

UNITS

GHz

dBm

MIN

200

NESG2030M04

2SC5761

M04

TYP

0.17

0.9

MAX

0.22

200

400

1.1

Related parts for NESG2030M04-A

NESG2030M04-A Summary of contents

Page 1

... NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input provides a device with a usable current range of 250 μ mA. The NESG2030M04 provides excellent low voltage/low current performance. ...

Page 2

... R th j-c V 2.3 V 1.2 ORDERING INFORMATION mA 35 PART NUMBER mW 80 NESG2030M04 °C 150 NESG2030M04-T2 -65 to +150 °C ORDERING INFORMATION (Pb-Free) PART NUMBER NESG2030M04-A NESG2030M04-T2 25°C) A 190 μa 160 μa 130 μa 100 μa 70 μa 40 μ μ (V) CE 100 NESG2030M04 PARAMETERS UNITS Junction to Case Resistance ° ...

Page 3

... THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER Output Power (each tone 25°C) A 100 (mA 100 (mA GHz offset = 1 MHz 15 20 (mA) out NESG2030M04 MAXIMUM STABLE GAIN, INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 25 MSG 21e Collector Current, I (mA) C OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER GHz mA(RF OFF out 10 ...

Page 4

... NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I (mA 25°C) A NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 2.5 GHz 100 1 NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz 100 100 NESG2030M04 100 Collector Current, l (mA 100 Collector Current, l (mA) C ...

Page 5

... PIN CONNECTIONS 29.4 0.17 1. Emitter 34.5 0.16 2. Collector 40.4 0.16 3. Emitter 4. Base 47.1 0.16 63.0 0.15 81.1 0.15 NESG2030M04 (CONT Γ MIN A OPT (dB) (dB) MAG ANG Rn/ 1.26 18.16 0.064 90.1 1.27 17.40 0.072 106.5 1.28 16 ...

Page 6

... NESG2030M04 NESG2030M04 Vc = 2.000 5.000 mA +90° +120° +60° +150° +30° +180° +0° -150° -30° -120° -60° -90° 0.100 to 12.000GHz by 0.100 ...

Page 7

... NESG2030M04 +90° +120° +60° +150° +30° +180° +0° -150° -30° 0.100 to 12.000GHz by 0.100 -120° -60° -90° S MAG ...

Page 8

... NESG2030M04 +90° +90° +120° +120° +60° +60° +150° +150° +30° +30° +180° +180° +0° +0° 0.100 to 12.000GHz by 0.100 -150° ...

Page 9

... NESG2030M04 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 2.42e-13 MJC BF 382 XCJC NF 1.025 CJS VAF 87 VJS IKF 100 MJS ISE 5.2e- 2.806 TF BR 15.7 XTF NR 1.02 VTF VAR 1.307 ITF IKR 0.037 PTF ISC 9e- 2.194 EG RE 2.2 XTB ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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