UPA811T-T1-A CEL, UPA811T-T1-A Datasheet - Page 2

• Manufacturer Part Number: UPA811T-T1-A
• Description: TRANSISTOR NPN 8GHZ SOT363
• Manufacturer: CEL

Specifications of UPA811T-T1-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3.2dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.035 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
UPA811T
5.0
2.0
1.0
0.5
0.2
0.1
200
100
20
10
0
0
1
f = 1 MHz
V
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
CE
Collector to Base Voltage, V
FEEDBACK CAPACITANCE vs.
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
Ambient Temperature, T
= 3 V
COLLECTOR CURRENT vs.
AMBIENT TEMPERATURE
2
50
5
0.5
10
100
A
20
BE
(°C)
CB
(V)
Free Air
(V)
150
1.0
50
(T
A
= 25°C)
200
100
25
20
15
10
50
20
10
10
5
0
8
6
4
2
0
0.5
0.5
COLLECTOR TO EMITTER VOLTAGE
VCE = 3 V
f = 2 GHz
Collector to Emitter Voltage, V
GAIN BANDWIDTH PRODUCT vs.
1
COLLECTOR CURRENT vs.
1
COLLECTOR CURRENT
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
DC CURRENT GAIN vs.
0.5
5
5
10
10
C
C
(mA)
(mA)
V
CE
l
CE
B
100 µA
=20 µA
160 µA
140 µA
120 µA
= 3 V
40 µA
80 µA
60 µA
(V)
1.0
50
50