NESG2046M33-T3-A CEL, NESG2046M33-T3-A Datasheet - Page 2
NESG2046M33-T3-A
Manufacturer Part Number
NESG2046M33-T3-A
Description
TRANS NPN 2GHZ M33
Manufacturer
CEL
Datasheet
1.NESG2046M33-T3-A.pdf
(4 pages)
Specifications of NESG2046M33-T3-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
18GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.5dB @ 2GHz
Gain
9.5dB ~ 11.5dB
Power - Max
130mW
Dc Current Gain (hfe) (min) @ Ic, Vce
140 @ 2mA, 1V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
M33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
h
FE
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
h
Marking
FE
RANK
CLASSIFICATION
Value
2. Collector to base capacitance when the emitter grounded
PARAMETER
140 to 220
FB
T7
SYMBOL
h
C
|S
FE
re
I
I
NF
CBO
EBO
G
f
21e
Note 2
Note 1
T
a
|
2
(T
V
V
V
V
V
V
Z
V
Z
V
CB
EB
CE
CE
CE
CE
S
CE
S
CB
A
= Z
= Z
= 0.5 V, I
=+25ºC)
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
Sopt
Sopt
TEST CONDITIONS
, Z
, Z
E
C
C
C
C
C
E
L
L
= 0 mA
= 0 mA, f = 1 MHz
C
= 2 mA
= 15 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 3 mA, f = 2 GHz,
= Z
= Z
= 0 mA
Lopt
Lopt
MIN.
140
9.5
15
11
−
−
−
−
TYP.
11.5
180
0.8
0.2
18
13
−
−
MAX.
100
100
220
1.5
0.4
−
−
−
UNIT
GHz
nA
nA
dB
dB
dB
pF
−