NE85619-A CEL, NE85619-A Datasheet - Page 24

• Manufacturer Part Number: NE85619-A
• Description: TRANSISTOR NPN 1GHZ SC-90
• Manufacturer: CEL

Specifications of NE85619-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
• Gain: 6.5dB ~ 12.5dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Dc Collector/base Gain Hfe Min: 80
• Dc Current Gain Hfe Max: 160
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE85619-T1-A

OUTLINE DIMENSIONS
2.9 ± 0.2 0.95
2.9 ± 0.2
1.1
0.5±0.06
C
1.1 +0.2
0.1
+0.2
-0.1
-0.1
0.85
+0.06
0.6
-0.04
0.85
0.95
0.6
+0.10
-0.05
0.8
PACKAGE OUTLINE 39R
0.8
+0.10
PACKAGE OUTLINE 35
PACKAGE OUTLINE 39
-0.05
5˚
5˚
2
1
2.55±0.2
2
1
φ2.1
(MICRO-X)
2.8
1.5
2.8
1.5
E
E
+0.2
+0.2
-0.1
(Units in mm)
-0.3
+0.2
+0.2
0 to 0.1
-0.3
-0.1
0 to 0.1
ALL LEADS
3.8 MIN
5˚
3
4
4
3
5˚
45˚
B
(LEADS 1, 3, 4)
0.16 +0.10
0.4
(LEADS 2, 3, 4)
0.4
0.16 +0.10
0.55
1.8
+0.10
-0.06
-0.05
+0.10
-0.05
1.9
-0.06
1.8 MAX
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
1.9
1.9
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
2
2
1
1
PACKAGE OUTLINE 39R
PACKAGE OUTLINE 39
2.4
2.4
1.0
1.0
NE856 SERIES
3
4
3
4
1.0
1.0