NE68519-A CEL, NE68519-A Datasheet - Page 13

• Manufacturer Part Number: NE68519-A
• Description: TRANSISTOR NPN 2GHZ SC-90
• Manufacturer: CEL

Specifications of NE68519-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Gain: 7.5dB
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Dc Collector/base Gain Hfe Min: 75
• Gain Bandwidth Product Ft: 4.5 GHz
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 30 mA
• Power Dissipation: 0.125 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE68519-T1-A

BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
SCHEMATIC
NE68533 NONLINEAR MODEL
Parameters
RBM
VAR
CJE
MJE
CJC
VJC
VAF
VJE
ISE
IKR
ISC
IRB
IKF
NR
NF
NE
BR
RE
RB
BF
NC
RC
IS
0.40e-12
0.18e-12
7.9e-13
Infinity
7e-16
0.009
0.19
2.19
1.08
12.4
8.34
0.81
0.75
109
Q1
1.3
0.5
15
10
10
1
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
FC
TR
EG
TF
KF
AF
Base
C
BEPKG
L
BX
2e-12
0.011
0.34
0.75
4.58
1e-9
1.11
Q1
0.5
5.2
0
0
0
0
3
0
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
C
Q1
CEPKG
L
CX
0.05 to 3.0 GHz
V
7/97
CE
= 0.5 V to 6 V, I
Collector
seconds
farads
henries
ohms
volts
amps
0.13e-12
0.14e-12
0.85e-9
1.15e-9
0.15e-12
0.1e-12
0.05e-12
0.3e-9
0.3e-9
0.3e-9
C
68533
Units
= 0.5 mA to 20 mA
NE685 SERIES