NESG3031M05-T1-A CEL, NESG3031M05-T1-A Datasheet - Page 3

• Manufacturer Part Number: NESG3031M05-T1-A
• Description: TRANS NPN 5.8GHZ M05
• Manufacturer: CEL

Specifications of NESG3031M05-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.3V
• Noise Figure (db Typ @ F): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
• Gain: 7.5dB ~ 16dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 6mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Mounting Style: SMD/SMT
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

<R>
Document No. PU10414EJ04V0DS (4th edition)
Date Published December 2008 NS
Printed in Japan
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
• Maximum stable power gain: MSG = 14.0 dB TYP. @ V
• SiGe HBT technology (UHS3) adopted: f
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG3031M05
NESG3031M05-T1 NESG3031M05-T1-A
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
NF = 0.6 dB TYP., G
NF = 0.95 dB TYP., G
NF = 1.1 dB TYP., G
Part Number
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
Unit sample quantity is 50 pcs.
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
NESG3031M05-A
Order Number
a
a
a
= 16.0 dB TYP. @ V
= 9.5 dB TYP. @ V
= 10.0 dB TYP. @ V
LOW NOISE, HIGH-GAIN AMPLIFICATION
2
× 1.0 mm (t) glass epoxy PWB
NPN SiGe RF TRANSISTOR FOR
Symbol
NPN SILICON GERMANIUM RF TRANSISTOR
P
V
V
V
T
tot
CBO
CEO
EBO
I
T
C
stg
The mark <R> shows major revised points.
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
(Pb-Free)
Note
j
A
max
CE
= +25°C)
CE
CE
= 110 GHz
= 2 V, I
DATA SHEET
= 2 V, I
= 2 V, I
Package
−65 to +150
C
Ratings
C
= 6 mA, f = 5.8 GHz
12.0
C
150
150
4.3
1.5
= 6 mA, f = 2.4 GHz
35
CE
= 6 mA, f = 5.2 GHz
= 3 V, I
C
50 pcs
(Non reel)
3 kpcs/reel
= 20 mA, f = 5.8 GHz
Quantity
NESG3031M05
Unit
mW
mA
°C
°C
V
V
V
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Supplying Form
2003, 2008