UPA801T-T1-A CEL, UPA801T-T1-A Datasheet - Page 2

• Manufacturer Part Number: UPA801T-T1-A
• Description: TRANSISTOR NPN HF 4.5GHZ SOT3
• Manufacturer: CEL

Specifications of UPA801T-T1-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.5dB @ 1GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note: 1. Operation in excess of any one of these parameters may
TYPICAL PERFORMANCE CURVES
UPA801T
SYMBOLS
V
V
V
T
P
CBO
CEO
T
EBO
I
STG
C
result in permanent damage.
T
J
200
100
25
20
15
10
5
0
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
TOTAL POWER DISSIPATION vs.
PARAMETERS
Ambient Temperature, T
COLLECTOR CURRENT vs.
AMBIENT TEMPERATURE
1 Die
2 Die
50
l
5
B
=160 µA
100
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
UNITS
A
mW
mW
mA
(°C)
°C
°C
V
V
V
CE
(V)
1
150
10
(T
-65 to +150
RATINGS
A
(T
= 25°C)
100
110
200
150
20
12
3
A
= 25°C)
200
100
20
10
50
20
10
0
0.5
V
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
= 3 V
COLLECTOR CURRENT vs.
1
COLLECTOR CURRENT
Collector Current, I
DC CURRENT GAIN vs.
0.5
5
10
C
(mA)
BE
V
CE
(V)
= 3 V
1.0
50