NESG2021M05-T1-A CEL, NESG2021M05-T1-A Datasheet - Page 6

• Manufacturer Part Number: NESG2021M05-T1-A
• Description: TRANS NPN 2GHZ M05
• Manufacturer: CEL

Specifications of NESG2021M05-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 18dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
5
0
1
1
1
INSERTION POWER GAIN, MAG, MSG
V
f = 5 GHz
V
f = 2 GHz
V
f = 5 GHz
CE
CE
CE
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
= 2 V
= 3 V
INSERTION POWER GAIN, MAG,
= 3 V
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
MSG
10
10
10
|S
|S
|S
MAG
MAG
21e
21e
21e
|
|
|
2
2
2
C
C
C
MAG
(mA)
(mA)
(mA)
100
100
100
(T
A
= 25°C)
30
25
20
15
10
30
25
20
15
10
20
15
10
-5
5
0
5
0
5
0
-25
1
1
V
f = 3 GHz
V
f = 1 GHz
OUTPUT POWER, COLLECTOR CUR-
CE
CE
MSG vs. COLLECTOR CURRENT
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
V
I
INSERTION POWER GAIN, MAG,
cq
= 3 V
= 3 V
CE
= 12 mA (RF OFF)
= 3 V, f = 1 GHz
-20
RENT vs. INPUT POWER
Collector Current, I
Collector Current, I
Input Power, P
MSG
-15
P
out
10
10
MSG
|S
|S
MAG
21e
21e
-10
in
|
|
2
2
(dBm)
C
C
I
C
(mA)
(mA)
MAG
-5
100
100
0
50
40
30
20
10
0