NE68819-A CEL, NE68819-A Datasheet - Page 13

• Manufacturer Part Number: NE68819-A
• Description: TRANSISTOR NPN 2GHZ SC-90
• Manufacturer: CEL

Specifications of NE68819-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 3mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Dc Collector/base Gain Hfe Min: 70
• Dc Current Gain Hfe Max: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.125 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

(1) Gummel-Poon Model
BJT NONLINEAR MODEL PARAMETERS
NE68818 NONLINEAR MODEL
SCHEMATIC
Parameters
RBM
MJE
VAF
VAR
CJE
VJE
CJC
VJC
IKF
ISE
IKR
ISC
IRB
NR
BF
NF
NE
BR
RE
RB
NC
RC
IS
0.796e-12
0.549e-12
3.8e-16
3.8e-15
3.5e-16
135.7
0.001
1.49
12.3
0.06
6.14
0.71
0.38
0.65
1.62
Q1
0.6
1.1
3.5
0.4
3.5
4.2
28
1
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
Base
ITF
XTI
FC
TR
EG
TF
KF
AF
L
BX
1.5e-14
32e-12
11e-12
0.48
0.56
0.75
0.75
0.36
0.65
0.61
1.11
1.22
Q1
50
0
0
0
3
C
L
BEPKG
B
C
C
CBPKG
CB
(1)
Emitter
L
L
E
EX
C
CE
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
L
C
Parameter
time
capacitance
inductance
resistance
voltage
current
C
L
CEPKG
Parameters
CX
C
C
L
L
L
C
C
C
L
L
L
B
C
E
BX
CX
EX
0.5 to 6.0 GHz
V
5/97
CB
CE
CBPKG
CEPKG
BEPKG
CE
= 1 V to 5 V, I
Collector
C
= 1 mA to 10 mA
0.24e-12
0.27e-12
0.9e-9
0.52e-9
0.7e-9
0.001e-12
0.07e-12
0.11e-12
0.18e-9
0.18e-9
0.09e-9
NE688 SERIES
68818
seconds
farads
henries
ohms
volts
amps
Units