NESG2021M16-T3-A CEL, NESG2021M16-T3-A Datasheet - Page 9

• Manufacturer Part Number: NESG2021M16-T3-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2021M16-T3-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 18dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Remark The graphs indicate nominal characteristics.
10
5
4
2
0
0
4
3
1
6
5
4
3
2
1
8
6
2
0
1
1
1
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
V
f = 5.2 GHz
CE
= 1 V,
G
a
G
G
a
a
Collector Current I
Collector Current I
Collector Current I
10
10
10
NF
NF
NF
C
C
C
(mA)
(mA)
(mA)
V
f = 1 GHz
V
f = 2 GHz
CE
CE
= 1 V,
= 1 V,
100
100
100
Data Sheet PU10393EJ03V0DS
20
15
10
25
15
10
5
0
15
10
5
30
25
5
30
20
25
20
0
10
2
5
4
3
1
0
0
8
6
4
2
0
6
5
4
3
2
1
1
1
1
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
f = 5.2 GHz
CE
= 2 V,
G
Collector Current I
a
Collector Current I
Collector Current I
10
10
10
G
G
NF
NF
NF
a
a
C
C
C
(mA)
(mA)
(mA)
NESG2021M16
V
f = 1 GHz
V
f = 2 GHz
CE
CE
= 2 V,
= 2 V,
100
100
100
30
25
20
15
10
5
25
15
10
5
0
25
20
15
10
5
0
30
20
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