NE681M13-T3-A CEL, NE681M13-T3-A Datasheet
NE681M13-T3-A
Manufacturer Part Number
NE681M13-T3-A
Description
TRANSISTOR NPN 1GHZ M13
Manufacturer
CEL
Datasheet
1.NE681M13-T3-A.pdf
(3 pages)
Specifications of NE681M13-T3-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2.7dB @ 1GHz
Power - Max
140mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
140 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE681M13-T3-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
FEATURES
NEC's NE681M13 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M13" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
• NEW MINIATURE M13 PACKAGE:
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
DESCRIPTION
SYMBOLS
– Small transistor outline –
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
f
NF = 1.4 dB
T
|S
1.0 X 0.5 X 0.5 mm
C
= 7 GHz
h
I
I
NF
CBO
EBO
21E
FE 2
f
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
NEC's NPN SILICON TRANSISTOR
CE
PARAMETERS AND CONDITIONS
= 3 V, I
CE
EIAJ
= 3 V, I
CE
PACKAGE OUTLINE
1
CE
EB
REGISTERED NUMBER
C
CB
CB
PART NUMBER
= 3 V, I
= 7 mA, f = 1 GHz
= 3 V, I
= 1 V, I
C
= 3 V, I
= 10 V, I
= 7 mA, f = 1 GHz
(T
C
A
C
C
= 7 mA, f = 1 GHz
E
= 25°C)
= 7 mA
= 0
E
= 0, f = 1 MHz
= 0
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
1.0
+0.1
–0.05
0.5±0.05
0.1
2
1
California Eastern Laboratories
0.5
+0.1
–0.05
UNITS
GHz
dB
dB
µA
µA
pF
PACKAGE OUTLINE M13
3
0.125
0.1
+0.1
–0.05
0.7
MIN
4.5
10
80
0.15
0.35
0.35
0.15
+0.1
–0.05
NE681M13
(Units in mm)
+0.1
–0.05
NE681M13
2SC5615
1
2
M13
TYP
Bottom View
1.4
12
7
0.2
0.3
3
MAX
145
2.7
0.8
0.8
0.9
0.2
0.2
+0.1
–0.05
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NE681M13-T3-A Summary of contents
Page 1
... T • LOW NOISE FIGURE 1.4 dB DESCRIPTION NEC's NE681M13 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ flat lead style "M13" package is ideal for today's portable wireless applications. The NE681 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles ...
Page 2
... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 1 ORDERING INFORMATION (T = 25°C) A PART NUMBER UNITS RATINGS NE681M13 NE681M13-T3 1 140 150 °C -65 to +150 ° 25° ...
Page 3
... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...