NE851M13-T3-A CEL, NE851M13-T3-A Datasheet
NE851M13-T3-A
Specifications of NE851M13-T3-A
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NE851M13-T3-A Summary of contents
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... LOW PUSHING FACTOR DESCRIPTION NEC's NE851M13 transistor is designed for oscillator applica- tions GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. ...
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... COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.2 0.4 0.6 Base to Emitter Voltage 25°C) ORDERING INFORMATION A UNITS RATINGS PART NUMBER V 9 NE851M13-T3-A V 5.5 V 1.5 mA 100 mW 140 150 °C -65 to +150 ° 25°C) A 125 150 (°C) A 0.8 1.0 (V) BE QUANTITY 10 k pcs./reel REVERSE TRANSFR CAPACITANCE vs ...
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... GHz Collector Current INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz 25°C) A 100 (mA NE851M13 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN vs. FREQUENCY 0.1 1 ...
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TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG MAG 21e Collector Current INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT ...
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... I C -10 -15 -20 -15 -10 -5 Input Power, P (dBm 25° 100 (mA 100 (mA NE851M13 NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER GHz ...
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... TYPICAL SCATTERING PARAMETERS j50 j100 j25 j10 100 -j10 -j100 -j25 -j50 0.100 to 4.000 GHz by 0.050 NE851M13 FREQUENCY S 11 GHz MAG ANG 0.100 0.831 -46.49 0.200 0.789 -81.92 0.300 0.765 -106.07 0.400 0.750 -122.16 0.500 0.706 -133.99 0.600 0.699 -142.06 0.700 ...
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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 4.000GHz by 0.050 NE851M13 FREQUENCY S 11 GHz MAG ANG 0.100 0.718 -62.67 0.200 0.689 -102.19 0.300 0.680 -124.30 0.400 0.677 -137.54 0.500 0.648 -147.55 0.600 0.645 -153.87 0.700 0.647 -158.99 0.800 ...
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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 4.000GHz by 0.050 NE851M13 FREQUENCY S 11 GHz MAG ANG 0.100 0.592 -86.11 0.200 0.610 -124.37 0.300 0.620 -141.71 0.400 0.626 -151.34 0.500 0.610 -159.31 0.600 0.610 -163.96 0.700 0.613 -167.68 0.800 ...
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... Parameters Q1 C 0. 0.55 L 15e-12 L 0.1 2 MODEL TEST CONDITIONS 0.03 Frequency: Bias: 0 Date: 1.0e-9 1. 170e-15 1.65 CPKG Collector CEPKG 0.05 pF NE851M13 0.05 pF CBPKG 0.05 pF CEPKG 0.1 to 5.0 GHz 09/2001 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 01/27/2003 ...
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... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...