AT-41533-BLKG Avago Technologies US Inc., AT-41533-BLKG Datasheet - Page 2
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AT-41533-BLKG
Manufacturer Part Number
AT-41533-BLKG
Description
TRANS NPN BIPO 12V 50MA SOT-23
Manufacturer
Avago Technologies US Inc.
Specifications of AT-41533-BLKG
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Noise Figure (db Typ @ F)
1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
Gain
9dB ~ 14.5dB
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Transition Frequency Typ Ft
10GHz
Power Dissipation Pd
225mW
Dc Collector Current
500mA
Dc Current Gain Hfe
270
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-41533-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-41511, AT-41533 Absolute Maximum Ratings
Electrical Specifications, T
Characterization Information, T
Symbol
Symbol
|S
Symbol
G
P
I
I
h
NF
IP
G
CBO
EBO
21E
V
V
V
T
1dB
1dB
FE
CEO
P
EBO
CBO
A
I
T
STG
3
C
T
|
j
2
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
Noise Figure
V
Associated Gain
V
Power at 1 dB Gain Compression (opt tuning)
V
Gain at 1 dB Gain Compression (opt tuning)
V
Output Third Order Intercept Point,
V
Gain in 50 Ω system; V
CE
CE
CE
CE
CE
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Parameters and Test Conditions
Parameter
C
C
C
C
C
Parameters and Test Conditions
= 5 mA
= 25 mA
= 25 mA
=25 mA (opt tuning)
= 5 mA
[2,3]
CE
A
= 25°C
= 5 V, I
A
= 25°C
C
Units
mW
= 5 mA
mA
°C
°C
V
V
V
V
I
V
V
C
CE
CB
EB
= 5 mA
= 5 V
= 3 V
= 1 V
Maximum
Absolute
-65 to 150
Units Min
225
150
1.5
20
12
50
µA
µA
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
-
[1]
30
AT-41511
Typ
150
Notes:
1. Operation of this device above any one
2. T
3. Derate at 1.82 mW/°C for T
Units
dBm
dBm
Thermal Resistance:
of these parameters may cause
permanent damage.
Mounting Surface
dB
dB
dB
dB
2
Max
270
0.2
1.0
θ
AT-41511 AT-41533
Min Typ Min Typ
13.5 15.5 10.8 12.8
jc
=550°C/W
Min
= 25°C.
30
15.5
14.5
17.5
1.0
1.7
7.9
25
11
AT-41533
Typ
150
C
[2]
> 26°C.
Max
270
0.2
1.0
14.5
14.5
14.5
1.0
1.6
5.2
25
9