NE68719-T1-A CEL, NE68719-T1-A Datasheet

TRANSISTOR NPN 2GHZ SMD

NE68719-T1-A

Manufacturer Part Number
NE68719-T1-A
Description
TRANSISTOR NPN 2GHZ SMD
Manufacturer
CEL
Datasheet

Specifications of NE68719-T1-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3V
Frequency - Transition
11GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2dB @ 2GHz
Power - Max
90mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.03 A
Power Dissipation
90 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NEC XXXXXXXXXX
RF & Wireless
Semiconductors
2010

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NE68719-T1-A Summary of contents

Page 1

NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 ...

Page 2

2 ...

Page 3

... Silicon Transistor Chips Oscillator and Switching Transistors Silicon RFICs Low Power and Wideband Amplifiers Low Noise Amplifiers BiCMOS Wideband LNAs with Tx/Rx Bypass AGC Amplifiers with Video Output Variable Gain Amplifiers DC to VHF Differential Amplifier Frequency Up and Down Converters Out-of-Band Tuners Prescalers (Frequency Dividers) S-Parameters, SPICE Models, App Notes, data sheets, and more are available at cel.com ...

Page 4

... SPDT, industry’s best low cost, med power switch, industry standard pkg UPG2406TK /T6R SPDT, medium power, choice of packages UPG2404T6Q SP3T, high power, ideal for triple mode cellular phone, NFC UPG2405T6Q SP3T, miniature package for Bluetooth, WLAN, NFC UPG2413T6M / T6Z SP3T, medium power, low insertion loss, low profile package UPG2150T5L SP3T isolation between WLAN & ...

Page 5

Front End Components for 450 MHz to 2.5 GHz MMIC & Transistor LNAs (Performance @ 1GHz) UPD5740T6N Wideband CMOS LNA IC with bypass for mobile DTV UPC3237TK SiGe:C RFIC: 1.4dB NF, 15.3 dB Gain, for DTV NE662M04 Silicon Bipolar Transistor: 1.0 dB NF, 21dB Gain NESG2031M05 SiGe Bipolar Transistor: 0.7dB NF, 23dB Gain NESG3031M05 SiGe ...

Page 6

... SiGe:C MMIC, 1.8 to 3.3 V control voltage, 1.1dB noise figure, 16.5dB gain NESG2031M05 SiGe HBT, 0.9dB noise figure, 17dB gain NESG3031M05/M14 SiGe HBT, 0.6 dB noise figure, 16dB gain CEL System-on-Chip Transceiver IC ZIC2410 RF Transceiver with 8051 MCU: +8dBm output power, 106dB link budget, scalable data rates to 1 Mbps, voice CODEC, 48 pin QFN or 72 pin VFBGA package Notes: 1. Under development, please inquire 6 ™ ...

Page 7

RFIC Low Loss High Rejection Pre-Filter LNA Low Noise Amplifiers for L to C-Band Applications First, second and third stage devices for applications from 1 to 8GHz FIRST SECOND Filter STAGE STAGE LNAs by Application Application Frequency GPS 1.575 GHz DAB and ...

Page 8

Front End ICs 2.4 & 5.8 GHz WLAN/ Wi-Fi UPGxxxx SP3T Switches Single and multi-throw switches and discrete Silicon and GaAs low noise amplifiers designed specifically for Dual Band WLAN Choose  Single or Multi Throw RFIC Switches GaAs RFIC Switches to 2.5 GHz — Single & Multi ...

Page 9

WiMAX Single and multi-throw switches and transistor and RFIC low noise amplifiers designed specifically for WiMAX RFIC &  Transistor LNAs RFIC Switches Transceiver GaAs RFIC Switches UPG2176T5N SPDT 2.4 – 6GHz, Insertion Loss: 0.5dB @ 2.4GHz, 0.7dB @ 5.5GHz, internal termination UPG2157T5F ...

Page 10

GaAs RFIC Switches: Single & Multi-Throw SPDT Dual Control Switches TYPICAL ELECTRICAL CHARACTERISTICS (T Part Number Features UPG2009TB High Power/High Linearity UPG2030TK Medium Power, Versatile High Power, Low Harmonics UPG2155TB Medium Power, Small Pkg +1.8, 2.7/0 UPG2158T5K +1.8, 2.7/0 UPG2159T6R Low Insertion ...

Page 11

GaAS RFIC Switches for Broadband & MobileComm Broadband Switches to 6GHz TYPICAL ELECTRICAL CHARACTERISTICS (T Part Number Description UPG2157T5F SPDT, for WiMAX DPDT 2.4 – 2.5 GHz UPG2162T5N 4.9 – 6.0GHz SPDT 2.0 – 6.0GHz UPG2163T5N High Performance DPDT 2.4 ...

Page 12

GaAs Devices: FETs, RFIC LNAs & Power Amplifiers Low Noise GaAs FETs, 100 MHz to 20GHz Recommended Gate Gate Frequency Part Length Width Range Number (µm) (µm) (GHz) NE3210S01 0.2 160 0.2 160 NE350184C ...

Page 13

GaAs Devices: Integrated Front End ICs Front End ICs for Handset and Wireless Applications ELECTRICAL CHARACTERISTICS (T Frequency Test Part Range Conditions Number (MHz 2450 MHz 2400 to 2500 dBm UPG2253T6S 3.0 V ...

Page 14

... NE68119 1.0 2.5 3 NE68130 1 NE68133 1 NE68139 1 NE68518 2.0 2.5 3 NE68519 2.0 2.5 3 NE68539 2.0 2.5 3 NE68618 2 NE68619 2 NE68718 2 NE68719 2 NE851M13 2 NE85618 1.0 2.5 3 NE85619 1.0 2.5 3 NE85630 1 NE85633 1 NE85639 1 NE894M13 2 NE97733 1.0 – 8 –3 NE97833 1.0 – 10 – 25°C C ...

Page 15

Small Signal & Medium Power Transistors, Cordless Phone Devices SiGe Transistors NF/G A TEST Part Number (GHz) (V) (mA) NESG2021M05 NESG2021M05 5 ESG2021M16 NESG2030M04 2 2 ...

Page 16

Silicon Transistors: Twin Packages, Chips, Oscillator & Switching Devices Twin Transistors TEST NF/G NF Part TYP TYP CE C Number (GHz) (V) (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) TYP Twin Transistors in ...

Page 17

Silicon RFICs: Low Power & Wideband Amplifiers Low Power Amplifiers Typical Frequency Range 3dB (V) (mA) Part down Number (MHz) MIN TYP UPC2745TB 2700 UPC2746TB 1500 UPC2747TB 1800 3 3.8 3 ...

Page 18

Silicon RFICs: Low Noise, AGC & Variable Gain Amplifiers SiGe and SiGe:C Low Noise Amplifiers Typical Frequency V CC (V) (mA) Part (GHz) Number MIN TYP UPC8211TK 1 3 — 3.5 UPC8215TU 1.575 3 — 10.0 1 ...

Page 19

Silicon RFIC Differential Amps, Up/Down Converters, Tuners & Prescalers DC to VHF Differential Amplfier ELECTRICAL CHARACTERISTICS (T Video Amp AVd Part (V) (mA) Gain 1 Gain 2 Gain 1 Gain 2 Number TYP TYP ...

Page 20

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