MMBTH10LT1G ON Semiconductor, MMBTH10LT1G Datasheet - Page 3

TRANS SS VHF MIXER NPN 25V SOT23

MMBTH10LT1G

Manufacturer Part Number
MMBTH10LT1G
Description
TRANS SS VHF MIXER NPN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTH10LT1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Power Dissipation
225 mW
Maximum Operating Frequency
650 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 4 mA at 10 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage
30V
Emitter-base Voltage
3V
Dc Current Gain (min)
60
Frequency (max)
650MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTH10LT1GOS
MMBTH10LT1GOS
MMBTH10LT1GOSTR

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- 10
- 20
- 30
80
70
60
50
40
30
20
70
60
50
40
30
20
10
10
0
0
100
100
Figure 1. Rectangular Form
Figure 3. Rectangular Form
200
200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
- b
- g
g
ib
ib
fb
300
300
COMMON−BASE y PARAMETERS versus FREQUENCY
400
400
y
(V
fb
500
500
, FORWARD TRANSFER ADMITTANCE
CB
b
fb
TYPICAL CHARACTERISTICS
= 10 Vdc, I
y
ib
700
700
, INPUT ADMITTANCE
http://onsemi.com
C
1000
1000
= 4.0 mAdc, T
3
- 10
- 20
- 30
- 40
- 50
- 60
60
50
40
30
20
10
0
70
0
1000 MHz
100
A
60
= 25°C)
10
200
50
20
700
Figure 2. Polar Form
Figure 4. Polar Form
40
30
30
400
g
g
ib
fb
(mmhos)
(mmhos)
20
40
400
10
50
600
0
700
60
- 10
200
1000 MHz
70
- 20 - 30
100
80

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