NE97833-A CEL, NE97833-A Datasheet - Page 2

• Manufacturer Part Number: NE97833-A
• Description: TRANS PNP 1GHZ SOT-23
• Manufacturer: CEL

Specifications of NE97833-A

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 5.5GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 15mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 3 V
• Continuous Collector Current: - 0.05 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NE97833-T1B-A

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
V
V
V
T
CBO
CEO
T
EBO
I
STG
C
J
400
200
100
300
14
12
10
0
8
6
4
2
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
1
0
NE97833
DC POWER DERATING CURVES
PARAMETERS
vs. COLLECTOR CURRENT
Ambient Temperature, T
Collector Current, I
50
GAIN BANDWIDTH
100
10
V
CE
= -1 V
C
(mA)
UNITS
FREE AIR
150
mA
A
V
V
°C
°C
V
V
V
f = 1 GHz
CE
CE
(°C)
= -10 V
= -3 V
1
100
(T
-65 to +200
200
RATINGS
A
(T
= 25°C)
150
-20
-12
-50
-3
A
= 25°C)
100
-10
10
30
20
10
14
12
10
1
0
-0.1
4
2
0
8
6
100
1
INSERTION GAIN vs. FREQUENCY
vs. COLLECTOR CURRENT
200
DC CURRENT GAINS
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
-1.0
Frequency, f (MHz)
INSERTION GAIN
300
500
-10
10
V
CE
V
I
C
CE
= -1 V
= 5 mA
1000
C
C
= 1 V
V
V
V
(mA)
-100
(mA)
CE
CE
CE
V
I
C
CE
f = 1 GHz
V
= -15 mA
VS.
= -3 V
= -2 V
= -1 V
V
CE
= -10 V
CE
= -3 V
= -10 V
-1000
3000
100