HFA3102BZ96 Intersil, HFA3102BZ96 Datasheet - Page 2

• Manufacturer Part Number: HFA3102BZ96
• Description: IC TRANS ARRAY DUAL NPN 14-SOIC
• Manufacturer: Intersil

Specifications of HFA3102BZ96

• Transistor Type: 6 NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 10GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
• Gain: 12.4dB ~ 17.5dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HFA3102BZ96

Absolute Maximum Ratings
V
V
V
I
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
NOTE:
C
1. θ
CEO
CBO
EBO
2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only
, Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
SYMBOLS
h
V
V
V
I
LEAKAGE
dV
TRENCH-
G
FE1
(BR)CBO
(BR)CEO
(BR)EBO
NF
NF
JA
I
I
f
C
NFMIN
V
C
Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V
CBO
h
MAX
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V
Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V
EBO
I
OS
OS
f
OS
FE
CB
EB
MIN
50Ω
T
/h
is measured with the component mounted on an evaluation PC board in free air.
/dT
FE2
Collector-to-Base Breakdown Voltage (Q
Q
Collector-to-Emitter Breakdown
Voltage (Q
Emitter-to-Base Breakdown Voltage (Q
and Q
Collector Cutoff Current
(Q
Emitter Cutoff Current (Q
DC Current Gain (Q
Collector-to-Base Capacitance
Emitter-to-Base Capacitance
Current Gain-Bandwidth Product
Power Gain
Available Gain at Minimum Noise Figure
Minimum Noise Figure
50Ω Noise Figure
DC Current Gain Matching
(Q
Input Offset Voltage (Q
(Q
Input Offset Current (Q
(Q
Input Offset Voltage TC
(Q
Collector-to-Collector Leakage
(Pin 6, 7, 13, and 14)
2
1
1
4
4
1
, Q
, Q
and Q
and Q
and Q
and Q
4
6
2
, and Q
)
, Q
2
5
5
2
1
4
, Q
)
)
, Q
-
, and Q
thru Q
Bandwidth Product
PARAMETER
5
4
4
)
and Q
and Q
2
T
6
5
)
A
1
)
T
thru Q
= 25°C
A
5
5
1
1
)
)
= 25°C
and Q
and Q
3
and Q
6
)
2
2
),
),
6
)
3
1
,
I
I
I
V
V
I
V
V
I
I
I
V
I
V
I
V
I
I
I
I
∆V
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
EB
CB
EB
CE
CE
CE
= 50µA, I
= 100µA, I
= 100µA, I
= 10mA, V
= 10mA, V
= 10mA, V
= 3mA,
= 3mA,
= 3mA,
= 10mA, V
= 10mA, V
= 10mA, V
= 10mA, V
TEST
TEST CONDITIONS
HFA3102
= 1V, I
= 0, f = 1MHz
= 5V, I
= 5V, f = 1MHz
= 3V
= 3V
= 3V
= 5V
C
E
C
E
B
= 0
= 0
CE
CE
CE
CE
CE
CE
CE
= 0
f = 0.5GHz
f = 1.0GHz
f = 1.0GHz
f = 1.0GHz
f = 0.5GHz
f = 0.5GHz
= 0
= 0
Thermal Information
Thermal Resistance (Typical, Note 1)
Maximum Power Dissipation at 75°
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
= 3V
= 5V
= 5V
= 3V
= 3V
= 3V
= 3V
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25W
(SOIC - Lead Tips Only)
(NOTE 2)
LEVEL
TEST
A
A
A
A
A
A
B
B
C
C
C
C
C
C
C
C
A
A
A
C
B
MIN
5.5
0.9
12
40
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ALL GRADES
TYP
17.5
12.4
0.01
300
200
0.1
1.8
2.1
3.3
3.5
1.0
1.5
0.5
18
12
70
10
6
5
5
-
MAX
100
1.1
10
25
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
θ
July 14, 2005
JA
UNITS
µV/°C
128
GHz
GHz
FN3635.5
mV
(°C/W)
νΑ
νΑ
dB
dB
dB
dB
dB
dB
µA
nA
fF
fF
V
V
V
-
-