UPA800T-T1-A CEL, UPA800T-T1-A Datasheet

UPA800T-T1-A

Manufacturer Part Number

UPA800T-T1-A

Description

TRANSISTOR NPN HF FT=8GHZ SOT

Manufacturer

CEL

Datasheets

1.UPA800T-T1-A.pdf (9 pages)

2.UPA800T-T1-A.pdf (2 pages)

Specifications of UPA800T-T1-A

Transistor Type

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (max)

10V

Frequency - Transition

8GHz

Noise Figure (db Typ @ F)

1.9dB ~ 3.2dB @ 2GHz

Power - Max

200mW

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5mA, 3V

Current - Collector (ic) (max)

35mA

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Single

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

UPA800T-ATR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

UPA800T-T1-A

Manufacturer:

NEC

Quantity:

20 000

Current page: 1 of 9
Download datasheet (193Kb)

ELECTRICAL CHARACTERISTICS

• SMALL PACKAGE STYLE:

• LOW NOISE FIGURE:

• HIGH GAIN:

• EXCELLENT LOW VOLTAGE, LOW CURRENT

NEC's UPA800T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

suited for pager and other hand-held wireless applications.

FEATURES

DESCRIPTION

Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

SYMBOLS

, low voltage bias and small size make this device ideally

2 NE680 Die in a 2 mm x 1.25 mm package

NF = 1.9 dB TYP at 2 GHz

PERFORMANCE

Cre

CBO

EBO

21E

FE 1

21E

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA800T-T1, 3K per reel..

= 7.5 dB TYP at 2 GHz

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain at V

Gain Bandwidth at V

Feedback Capacitance at V

Insertion Power Gain at V

Noise Figure at V

PARAMETERS AND CONDITIONS

PACKAGE OUTLINE

PART NUMBER

= 3 V, I

FREQUENCY TRANSISTOR

= 5 mA, f = 2 GHz

= 1 V, I

= 3 V, I

= 10 V, I

= 5 mA

= 5 mA, f = 2 GHz

= 0

= 5 mA

= 0, f = 1 MHz

= 0

= 25°C)

NPN SILICON HIGH

UNITS

GHz

µA

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

OUTLINE DIMENSIONS

Note:

Pin 3 is identified with a circle on the bottom of the package.

2.0 ± 0.2

0.9 ± 0.1

1.3

California Eastern Laboratories

MIN

5.5

0.7

0.65

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

1.25 ± 0.1

UPA800T

0 ~ 0.1

TYP

S06

120

8.0

0.3

7.5

1.9

(Units in mm)

UPA800T

0.2 (All Leads)

0.15

MAX

200

1.0

0.7

3.2

+0.10

- 0.05

Related parts for UPA800T-T1-A

UPA800T-T1-A Summary of contents

Page 1

... CE Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA800T-T1, 3K per reel.. NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS PIN OUT 1 ...

Page 2

... K ± MAG = When K ≤ 1, MAG is undefined and MSG values are used. MSG = | MAG = Maximum Available Gain MSG = Maximum Stable Gain 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 20 UPA800T-T1 1 110 mW 200 150 °C -65 to +150 ° MAG ANG MAG ANG 1 ...

Page 3

... TYPICAL SCATTERING PARAMETERS 1 0.8 0.6 0.4 5 GHz 0.2 0 -0.2 5 GHz -0.4 -0.6 -0.8 -1 UPA800T (Q1 1V 1mA, CE 112 Frequency S 11 GHz MAG ANG 0.250 0.940 -18.90 0.400 0.905 -29.70 0.600 0.846 -43.00 0.800 0.778 -55.50 1.000 0.710 -66.90 1.500 0.532 -92.30 2.000 ...

Page 4

... UPA800T (Q2 mA, CE 107 Frequency S 11 GHz MAG ANG 0.250 0.742 -38.90 11.219 0.400 0.629 -57.50 0.600 0.506 -75.80 ...

Page 5

... TYPICAL SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 5 GHz 0 0.2 0.4 0.6 0.4 1.5 -0.2 5 GHz -0.4 -0.6 -0.8 -1 UPA800T (Q1 3V mA, CE 112 Frequency S 11 GHz MAG ANG 0.250 0.550 -54.70 0.400 0.414 -74.40 0.600 0.308 -91.40 0.800 0.237 -104.90 1.000 0.188 -116 ...

Page 6

... UPA800T2 (Q2 5V mA, CE 107 Frequency S 11 GHz MAG ANG 0.25 0.586 -52.30 0.40 0.455 -72.20 0.60 0.346 -89.60 ...

Page 7

... UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS Parameters Q1, Q2 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS IKF 0.027 MJS ISE 1e- 2. 1.0 XTF NR 1.05 VTF VAR Infinity ITF IKR Infinity PTF ISC 2 0.6 XTB RB 17.88 XTI RBM 1 ...

Page 8

... UPA800T NONLINEAR MODEL SCHEMATIC LC Pin 1 0.05 nH C_C1E1 0 Pin 2 1.05 nH 0.05 nH C_E1C2 0. Pin 3 0.05 nH Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 9

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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