NE85630-T1-A CEL, NE85630-T1-A Datasheet - Page 21

• Manufacturer Part Number: NE85630-T1-A
• Description: TRANSISTOR NPN 1GHZ SOT-323
• Manufacturer: CEL

Specifications of NE85630-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
• Gain: 6dB ~ 12dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SC4226-T1-A; NE85630-ATR

NE85639 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
IKF
ISE
ISC
IRB
VJC
BR
NR
IKR
NC
RE
RB
RC
BF
NE
IS
NF
3.2e-15
1.96e-4
2.8e-12
1.1e-12
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
3.6
Q1
3.9
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
CJS
MJS
PTF
XTB
VJS
XTF
VTF
EG
FC
XTI
KF
Base
TF
ITF
TR
AF
L
BX
(1)
10e-12
C
0.55
0.75
1e-9
1.11
L
Q1
0.3
0.5
0.2
10
BEPKG
0
0
6
0
0
3
0
1
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
L
CE
C
C
Parameter
time
capacitance
inductance
resistance
voltage
current
L
CEPKG
Parameters
C
C
L
L
L
C
C
C
L
L
L
Q1
CX
B
C
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.1 to 3.0 GHz
V
6/12/96
CE
= 2.5 V to 10 V, I
Collector
C
= 0.3 mA to 7 mA
NE85639
0.087e-12
0.16e-12
1.1e-9
0.81e-9
0.58e-9
0.02e-12
0.08e-12
0.01e-12
0.39e-9
0.39e-9
0.2e-9
NE856 SERIES
seconds
farads
henries
ohms
volts
amps
Units