NE68819-T1-A CEL, NE68819-T1-A Datasheet - Page 17

• Manufacturer Part Number: NE68819-T1-A
• Description: TRANSISTOR NPN 2GHZ SMD
• Manufacturer: CEL

Specifications of NE68819-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 3mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: Mini 3P
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2SC5195-T1-A; NE68819-ATR

BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
NE68839 NONLINEAR MODEL
SCHEMATIC
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
ISE
IKR
ISC
IRB
IKF
NR
NF
NE
BR
RE
RB
BF
NC
RC
IS
0.796e-12
0.549e-12
3.8e-16
3.8e-15
3.5e-16
135.7
0.001
1.49
12.3
0.06
6.14
0.71
0.38
0.65
1.62
Q1
0.6
1.1
3.5
0.4
3.5
4.2
28
1
Parameters
XCJC
MJC
MJS
CJS
VJS
XTF
VTF
PTF
XTB
ITF
XTI
EG
FC
TF
TR
KF
AF
Base
C
BEPKG
L
0.032e-9
BX
11e-12
0.48
0.56
0.75
0.75
0.36
0.65
0.61
1.11
Q1
50
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
C
CE
L
Parameters
C
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
L
C
C
C
L
L
L
B
C
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
L
C
CX
Q1
CEPKG
0.05 to 5.0 GHz
V
10/3/96
CE
= 0.5 V to 5 V, I
Collector
0.24e-12
0.27e-12
0.9e-9
0.47e-9
0.6e-9
0.085e-12
0.07e-12
0.01e-12
0.39e-9
0.39e-9
0.2e-9
seconds
farads
henries
ohms
volts
amps
C
68839
Units
= 0.5 mA to 10 mA
NE688 SERIES