MMBFJ309LT1 ON Semiconductor, MMBFJ309LT1 Datasheet
MMBFJ309LT1
Manufacturer Part Number
MMBFJ309LT1
Description
JFET SS N-CHAN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBFJ309LT1G.pdf
(5 pages)
Specifications of MMBFJ309LT1
Transistor Type
N-Channel JFET
Voltage - Rated
25V
Current Rating
30mA
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Other names
MMBFJ309LT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBFJ309LT1G
Manufacturer:
ON Semiconductor
Quantity:
38 536
Company:
Part Number:
MMBFJ309LT1G
Manufacturer:
ON Semiconductor
Quantity:
250
Company:
Part Number:
MMBFJ309LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBFJ309LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBFJ309LT1G,
MMBFJ310LT1G
JFET - VHF/UHF Amplifier
Transistor
N−Channel
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Source Voltage
Gate−Source Voltage
Gate Current
Total Device Dissipation FR−5 Board,
(Note 1) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
= 25°C
Characteristic
Rating
Symbol
Symbol
T
R
J
V
V
P
, T
I
qJA
DS
GS
G
D
stg
−55 to +150
Value
Max
225
556
1.8
25
25
10
1
mW/°C
mAdc
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
†For information on tape and reel specifications,
MMBFJ309LT1G
MMBFJ310LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
1
(Note: Microdot may be in either location)
6x = Device Code
M
G
ORDERING INFORMATION
2
GATE
3
MARKING DIAGRAM
= Date Code*
= Pb−Free Package
http://onsemi.com
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
3
1
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
6x M G
Publication Order Number:
G
SOT−23 (TO−236)
1 DRAIN
2 SOURCE
CASE 318
STYLE 10
3,000 / Tape & Reel
3,000 / Tape & Reel
MMBFJ309LT1/D
Shipping
†
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MMBFJ309LT1 Summary of contents
Page 1
... DRAIN 3 SOT−23 (TO−236) CASE 318 1 STYLE 10 2 MARKING DIAGRAM Device Code for MMBFJ309LT1 for MMBFJ310LT1 M = Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT− ...
Page 2
ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (I = −1.0 mAdc Gate Reverse Current (V = −15 Vdc) GS Gate Reverse Current (V = −15 Vdc Gate Source Cutoff Voltage (V ...
Page 3
I Characteristics versus Gate−Source Voltage 100 1.0 k GS(off GS(off) 100 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5 ...
Page 4
25° 6 100 200 300 500 f, FREQUENCY (MHz) Figure 4. Common−Gate Y Parameter ...
Page 5
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBFJ309LT1/D ...