MRF8P20160HSR3 Freescale Semiconductor, MRF8P20160HSR3 Datasheet - Page 8

• Manufacturer Part Number: MRF8P20160HSR3
• Description: DISCRETE RF FET
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20160HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.92GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 37W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

8
MRF8P20160HR3 MRF8P20160HSR3
Figure 11. Maximum Output Power — Doherty Load Pull Optimization for Carrier Side
Figure 12. Maximum Efficiency — Doherty Load Pull Optimization for Carrier Side
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Z
Z
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression.
Z
Z
source
load
source
load
1880
1900
1920
MHz
1880
1900
1920
MHz
f
f
= Test circuit impedance as measured from gate contact to ground.
= Test circuit impedance as measured from drain contact to ground.
= Test circuit impedance as measured from gate contact to ground.
= Test circuit impedance as measured from drain contact to ground.
Input
Matching
Network
Input
Matching
Network
Watts
Max Eff.
98
98
97
Max P
65.1
64.6
64.6
%
V
out
V
DD
DD
(1)
dBm
49.9
49.9
49.9
Z
(1)
= 28 Vdc, I
= 28 Vdc, I
Z
source
source
Device
Under
Test
5.14 -- j9.41
7.59 -- j9.88
8.90 -- j9.65
Device
Under
Test
DQA
DQA
Z
source
5.14 -- j9.41
7.59 -- j9.88
8.90 -- j9.65
Ω
= 550 mA
= 550 mA
Z
source
Ω
Z
Z
load
load
3.04 -- j3.65
4.13 -- j2.87
4.12 -- j3.15
1.56 -- j5.24
1.58 -- j5.37
1.57 -- j5.48
Output
Matching
Network
Output
Matching
Network
Z
Z
load
Ω
load
Ω
Freescale Semiconductor
RF Device Data