MRF7S21170HS Freescale Semiconductor, MRF7S21170HS Datasheet - Page 16

• Manufacturer Part Number: MRF7S21170HS
• Description: IC MOSFET RF N-CHAN NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21170HS

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

16
MRF7S21170HR3 MRF7S21170HSR3
Revision
5
6
Mar. 2011
Apr. 2008
Date
• Corrected On Characteristics table I
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
• Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
• Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
• Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
2.7 Adc to 3.72 Adc; tightened V
test values, p. 2
numbers, p. 4
Signal, to better represent production test signal, p. 8
number, PCN13628, p. 1, 2
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
p. 15
REVISION HISTORY (continued)
GS(th)
D
value for V
minimum and maximum values to match production
Description
GS(th)
from 270 μAdc to 372 μAdc and V
Freescale Semiconductor
DS(on)
RF Device Data
from