MRF19030LR5 Freescale Semiconductor, MRF19030LR5 Datasheet

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MRF19030LR5

Manufacturer Part Number
MRF19030LR5
Description
IC MOSFET RF N-CHAN NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF19030LR5

Transistor Type
N-Channel
Frequency
1.96GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
1µA
Current - Test
300mA
Voltage - Test
26V
Power - Output
30W
Package / Case
NI-400
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
4.5W
Power Gain (typ)@vds
13dB
Frequency (min)
1.8GHz
Frequency (max)
2GHz
Package Type
NI-400
Pin Count
3
Forward Transconductance (typ)
2S
Input Capacitance (typ)@vds
98.5@26VpF
Output Capacitance (typ)@vds
37@26VpF
Reverse Capacitance (typ)
1.3@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
36%
Mounting
Surface Mount
Mode Of Operation
CDMA/FM/TDMA
Number Of Elements
1
Power Dissipation (max)
83300mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for class AB PCN and PCS base station applications with
Output Power
Derate above 25°C
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc in 30 kHz BW
1.25 MHz — - 55 dBc in 12.5 kHz BW
2.25 MHz — - 55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF19030
1930 - 1990 MHz, 30 W, 26 V
MRF19030LSR3
MRF19030LR3
LATERAL N - CHANNEL
CASE 465E - 04, STYLE 1
MRF19030LR3 MRF19030LSR3
RF POWER MOSFETs
CASE 465F - 04, STYLE 1
M3 (Minimum)
2 (Minimum)
MRF19030LSR3
- 65 to +150
MRF19030LR3
- 0.5, +65
- 0.5, +15
Value
Value
Class
83.3
0.48
NI - 400S
150
200
2.1
NI - 400
Rev. 12, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF19030LR5 Summary of contents

Page 1

... Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF19030 Rev. 12, 5/2006 MRF19030LR3 MRF19030LSR3 1930 - 1990 MHz ...

Page 2

... Vdc 2 3.3 4.5 Vdc — 0.29 0.4 Vdc — 2 — S — 98.5 — pF — 37 — pF — 1.3 — pF — 13 — dB — 36 — % — — dBc — — — — % — dBc — Device Data Freescale Semiconductor ...

Page 3

... Chip Capacitors C9 22 μF Tantalum Chip Capacitor C10 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors Ω Chip Resistors (0805) Z1 0.080″ x 0.595″ Microstrip Z2 0.080″ x 0.600″ Microstrip Figure 1. MRF19030LR3(SR3) Test Circuit Schematic RF Device Data Freescale Semiconductor C10 DUT ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout ...

Page 5

... Vdc 1960 MHz DD Two−Tone Measurement, 100 kHz Tone Spacing 11 1 OUTPUT POWER (WATTS) PEP out Figure 7. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS − Vdc 350 mA 1960 MHz, Channel Spacing DQ −15 (Channel Bandwidth): 885 kHz (30 kHz ...

Page 6

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Matching Under Test Network Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 7

... SEE NOTE (LID) ccc aaa (INSULATOR bbb ccc (LID SEATING A PLANE (FLANGE) M (INSULATOR) aaa Device Data Freescale Semiconductor PACKAGE DIMENSIONS bbb bbb ccc (LID (INSULATOR) T SEATING M PLANE aaa CASE 465E - 04 ISSUE 400 MRF19030LR3 (LID) ccc (INSULATOR) aaa (FLANGE) CASE 465F - 04 ISSUE E ...

Page 8

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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