MRF9080LR3 Freescale Semiconductor, MRF9080LR3 Datasheet - Page 10

• Manufacturer Part Number: MRF9080LR3
• Description: IC MOSFET RF N-CHAN NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF9080LR3

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 600mA
• Voltage - Test: 26V
• Power - Output: 75W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 18.5dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: NI-780
• Pin Count: 3
• Forward Transconductance (typ): 8S
• Output Capacitance (typ)@vds: 73@26VpF
• Reverse Capacitance (typ): 2.9@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Screw
• Mode Of Operation: GSM
• Number Of Elements: 1
• Power Dissipation (max): 250000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRF9080LR3
10
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
8
Oct. 2008
Date
• Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
• Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part
• Added Product Documentation and Revision History, p. 10
number, PCN12779, p. 1, 2
numbers, p. 3, 5
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
Freescale Semiconductor
RF Device Data