MRF6S21050LR5 Freescale Semiconductor, MRF6S21050LR5 Datasheet

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MRF6S21050LR5

Manufacturer Part Number
MRF6S21050LR5
Description
MOSFET RF N-CH 28V 11.5W NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S21050LR5

Transistor Type
N-Channel
Frequency
2.16GHz
Gain
16dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
450mA
Voltage - Test
28V
Power - Output
11.5W
Package / Case
NI-400
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W - CDMA base station applications with frequencies from 2110
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
out
Power Gain — 16 dB
Drain Efficiency — 27.7%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz,
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 450 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Document Number: MRF6S21050L
2110 - 2170 MHz, 11.5 W AVG., 28 V
CASE 465F - 04, STYLE 1
MRF6S21050LR3 MRF6S21050LSR3
CASE 465E - 04, STYLE 1
MRF6S21050LSR3
MRF6S21050LSR3
MRF6S21050LR3
MRF6S21050LR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 400S
NI - 400
- 65 to +150
2 x W - CDMA
Value
- 0.5, +68
- 0.5, +12
Value
1.16
1.28
150
225
(2,3)
Rev. 2, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6S21050LR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

... III (Minimum) Min Typ Max Unit — — 10 μAdc — — 1 μAdc — — 1 μAdc Vdc 2 2.9 4 Vdc — 0.21 0.3 Vdc — 0.75 — 11.5 W Avg 2157 MHz carrier out 27.7 — % — dBc — dBc — Device Data Freescale Semiconductor ...

Page 3

... C6 22 μ Tantalum Capacitor C7 47 μ Tantalum Capacitor C9, C10 10 μ Chip Capacitors C12 47 μ Electrolytic Capacitor C13, C14 220 μ Electrolytic Capacitors R1 3.3 W, 1/3 W Chip Resistor RF Device Data Freescale Semiconductor DUT Z6 0.113″ x 0.590″ Microstrip Z7 0.325″ x 0.590″ Microstrip Z8 0.214″ ...

Page 4

... bottom top. Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout MRF6S21050LR3 MRF6S21050LSR3 4 C3 C4, C5* C13 C11 C12 C10 C8 C9 C14 C2 MRF6S21050L Rev Device Data Freescale Semiconductor ...

Page 5

... MHz, Two−Tone Measurements, 10 MHz Tone Spacing 13.5 0 OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS = 28 Vdc 11.5 W (Avg.) DD out = 450 mA, 2−Carrier W−CDMA ACPR 2110 2120 2130 2140 ...

Page 6

... P3dB = 48.66 dBm (73.43 W) Actual Vdc 450 Pulsed CW, 8 μsec(on), 1 msec(off 2140 MHz INPUT POWER (dBm) in Input Power −20 IM3 −25 −30 −35 ACPR −40 −45 −50 −55 − 450 2140 MHz OUTPUT POWER (WATTS) CW out RF Device Data Freescale Semiconductor Ideal 100 ...

Page 7

... MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF 0.001 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 90 110 130 150 170 190 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device = 11.5 W Avg., and η ...

Page 8

... Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Device Input Matching Under Network Test Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 9

... G SEE NOTE (LID) ccc aaa (INSULATOR bbb ccc (LID SEATING T A PLANE (FLANGE) M (INSULATOR) aaa Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X Q bbb bbb ccc (LID (INSULATOR) T SEATING PLANE aaa CASE 465E - 04 ISSUE 400 MRF6S21050LR3 (LID) ccc (INSULATOR) aaa (FLANGE) CASE 465F - 04 ...

Page 10

... Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Added Product Documentation and Revision History MRF6S21050LR3 MRF6S21050LSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for and added “Measured in GS(Q) 2 and listed RF Device Data Freescale Semiconductor ...

Page 11

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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