MRF6VP41KHR6 Freescale Semiconductor, MRF6VP41KHR6 Datasheet - Page 17

• Manufacturer Part Number: MRF6VP41KHR6
• Description: MOSFET RF N-CH 1000W NI1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP41KHR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 450MHz
• Gain: 20dB
• Voltage - Rated: 110V
• Current Rating: 5mA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: NI-1230
• Drain Source Voltage Vds: 110V
• Continuous Drain Current Id: 5mA
• Power Dissipation Pd: 1kW
• Operating Temperature Range: -65°C To +150°C
• Rf Transistor Case: NI-1230
• No. Of Pins: 4
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
2
3
4
5
Sept. 2008
Nov. 2008
Mar. 2009
Jan. 2008
Apr. 2008
Apr. 2010
Date
• Initial Release of Data Sheet
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
• Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
• Added CW operation capability bullet to Features section, p. 1
• Added CW operation to Maximum Ratings table, p. 1
• Added CW thermal data to Thermal Characteristics table, p. 2
• Fig. 14, Series Equivalent Source and Load Impedance, corrected Z
• CW rating limits updated from 1176 W to 1107 W and 5.5 W/°C to 4.6 W/°C to reflect recent remeasured
• CW Thermal Characteristics changed from 81°C to 48°C and 0.16 °C/W to 0.15 °C/W using data from the
• Added Typical Performances table for 352.2 MHz and 500 MHz applications, p. 3
• Added Fig. 14, MTTF versus Junction Temperature -- CW, p. 7
• Added Figs. 16 and 18, Test Circuit Component Layout -- 352.2 MHz and 500 MHz, and Tables 6 and 7, Test
• Added Figs. 17 and 19, Series Equivalent Source and Load Impedance -- 352.2 MHz and 500 MHz, p. 10, 12
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
measured separately, p. 5
MTTF factor accordingly, p. 6
impedance as measured from gate to gate, balanced configuration” and Z
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to show
push--pull test conditions, p. 7
data, Max Ratings table, p. 1
most recent 352.2 MHz CW application circuit, p. 2
Circuit Component Designations and Values -- 352.2 MHz and 500 MHz, p. 9, 11
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
p. 17
PRODUCT DOCUMENTATION AND SOFTWARE
REVISION HISTORY
Description
MRF6VP41KHR6 MRF6VP41KHSR6
source
load
copy to read “Test circuit
copy to read “Test circuit
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