MRF6V12500HR5 Freescale Semiconductor, MRF6V12500HR5 Datasheet
MRF6V12500HR5
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MRF6V12500HR5 Summary of contents
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. RF Device Data Freescale Semiconductor = 200 mA, ...
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... Vdc — 0.25 — Vdc — 0.2 — pF — 697 — pF — 1391 — 200 mA 500 W Peak (50 W Avg.), DQ out 18.5 19.7 22.0 dB 58.0 62.0 — — --18 -- Vdc, DD — 18.5 — dB — 57.0 — RF Device Data Freescale Semiconductor % % ...
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... V Chip Capacitors C8, C11, C13, C16 2.2 μF, 100 V Chip Capacitors C9 22 μ Chip Capacitor C12 1 μF, 100 V Chip Capacitor C14, C15 470 μ Electrolytic Capacitors R1 Ω, 1/4 W Chip Resistors R3 Ω Chip Resistors RF Device Data Freescale Semiconductor Z19 Z9 Z10 Z11 Z21 DUT Z20 ...
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... MRF6V12500H Rev C11 C10 R4 Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout MRF6V12500HR3 MRF6V12500HSR3 C14 C12 C15 C13 C2 C16 RF Device Data Freescale Semiconductor ...
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... Vdc 1030 MHz DD Pulse Width = 128 μsec, Duty Cycle = 10 100 P , OUTPUT POWER (WATTS) PULSED out Figure 7. Pulsed Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 160 C 140 iss 120 C oss 100 Vdc rss f = 1030 MHz, Pulse Width = 128 μsec ...
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... Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature Vdc 200 mA 1030 MHz DD DQ Pulse Width = 128 μsec, Duty Cycle = 10% 100 P , OUTPUT POWER (WATTS) PULSED out versus Output Power 230 230 250 250 RF Device Data Freescale Semiconductor 1000 ...
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... Ω o Figure 12. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor 1030 MHz load f = 1030 MHz Z source Vdc 200 mA 500 W Peak DD DQ out f Z source MHz Ω 1030 1.36 -- j1.27 2.50 -- j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground ...
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... Description Part Number ATC100B2R2JT500XT ATC100B0R2BT500XT ATC100B330JT500XT G2225X7R225KT3AB T491X226K035AT ATC100B8R2CT500XT ATC100B390JT500XT C1825C223K1GAC C1812F104K1RAC MCGPR63V477M13X26--RH CRCW120622R0FKEA AD255A C11 C9 C17 C15 C13 C18 C8 C14 C16 C10 C12 Manufacturer ATC ATC ATC ATC Kemet ATC ATC Kemet Kemet Multicomp Vishay Arlon RF Device Data Freescale Semiconductor ...
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... Figure 14. Pulsed Power Gain, Drain Efficiency and IRL Pulse Width = 128 μsec Duty Cycle = 10 200 Figure 15. Power Gain and Drain Efficiency versus RF Device Data Freescale Semiconductor — 960- -1215 MHz G ps η D IRL Vdc 500 W Peak (50 W Avg.), I = 200 mA DD out DQ Pulse Width = 128 μ ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Network Test Z Z source load Ω o Output Matching Network RF Device Data Freescale Semiconductor ...
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... B 2 (FLANGE) D bbb (FLANGE (FLANGE (LID (FLANGE) D bbb (LID) ccc M M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc (LID) aaa T A ccc SEATING T PLANE CASE 465- -06 ISSUE G NI- -780 MRF6V12500HR3 ccc ...
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... Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency Fig. 15, Power Gain and Drain Efficiency versus Output Power Fig. 16, Series Equivalent Source and Load Impedance MRF6V12500HR3 MRF6V12500HSR3 12 REVISION HISTORY Description from --0.5, +100 to --0.5, +110 Vdc DSS RF Device Data Freescale Semiconductor ...
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... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...