MRF7S27130HSR5 Freescale Semiconductor, MRF7S27130HSR5 Datasheet

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MRF7S27130HSR5

Manufacturer Part Number
MRF7S27130HSR5
Description
MOSFET RF N-CH 23W NI-780S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S27130HSR5

Transistor Type
N-Channel
Frequency
2.5GHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.5A
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
23W
Power Gain (typ)@vds
16.5dB
Frequency (min)
2.5GHz
Frequency (max)
2.7GHz
Package Type
NI-780S
Pin Count
3
Input Capacitance (typ)@vds
326@28VpF
Output Capacitance (typ)@vds
711@28VpF
Reverse Capacitance (typ)
10.4@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
20%
Mounting
Surface Mount
Mode Of Operation
BWA/OFDM/WIBRO/WIMAX
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S27130HSR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for WiMAX base station applications with frequencies up to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Output Power
Operation
Derate above 25°C
Case Temperature 80°C, 104 W CW
Case Temperature 69°C, 23 W CW
out
Power Gain — 16.5 dB
Drain Efficiency — 20%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
= 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM
C
= 25°C
(1,2)
Characteristic
DD
Rating
= 28 Volts, I
DQ
= 1500 mA,
3
/
4
,
Symbol
Symbol
R
V
V
V
CW
T
T
T
θJC
DS
GS
DD
stg
C
J
Document Number: MRF7S27130H
CASE 465- 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S27130HR3 MRF7S27130HSR3
2500 - 2700 MHz, 23 W AVG., 28 V
MRF7S27130HSR3
MRF7S27130HR3
MRF7S27130HSR3
MRF7S27130HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.83
0.32
0.36
150
225
150
WiMAX
(2,3)
Rev. 1, 12/2008
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

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MRF7S27130HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

... Vdc — 2.7 — Vdc 4 5.4 7 Vdc 0.1 0.24 0.3 Vdc — 10.4 — pF — 711 — pF — 326 — Avg 2500 MHz and f = out 15 16.5 18 7.5 8.2 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Part - to - Part Insertion Phase Variation @ 2600 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) 1. RCE = 20Log(EVM/100) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol DD Mask Point B at 3.5 MHz Offset Point MHz Offset Point ...

Page 4

... Microstrip 0.583″ x 0.084″ Microstrip 0.950″ x 0.100″ Microstrip 0.560″ x 0.100″ Microstrip Taconic TLX8 - 0300, 0.030″, ε = 2.55 r Part Number Manufacturer ATC TDK ATC ATC Nippon Chemi - Con ATC Vishay Vishay RF Device Data Freescale Semiconductor RF ...

Page 5

... Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C12 C13 C11 C9 C5 C10 MRF7S27130H/HS Rev. 0 MRF7S27130HR3 MRF7S27130HSR3 5 ...

Page 6

... Watts Avg −5 28 −6 −36 −37 −7 −38 −8 −39 −9 −40 −10 2700 = 43 Watts Avg. = 1500 mA DQ 1000 2250 mA DQ 2000 mA 1500 mA 1200 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 200 ...

Page 7

... 2600 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Two−Tone Measurements −10 (f1 + f2)/2 = Center Frequency of 2600 MHz −20 −30 IM3−U −40 −50 IM7−U −60 100 ...

Page 8

... WiMAX TEST SIGNAL −10 −20 Input Signal −30 −40 −50 −60 −70 − −90 −20 −15 Figure 14. WiMAX Spectrum Mask Specifications 230 250 10 MHz Channel BW ACPR in 1 MHz ACPR in 1 MHz Integrated BW Integrated BW −10 − FREQUENCY (MHz) RF Device Data Freescale Semiconductor 20 ...

Page 9

... Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 5 Ω source f = 2500 MHz f = 2700 MHz Vdc 1500 mA Avg out source load MHz W W 2500 4.499 - j2.335 2.936 - j4.876 2525 4.382 - j1.944 2.885 - j4.666 2550 4.294 - j1.567 2.838 - j4.467 2575 4 ...

Page 10

... U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 11

... Initial Release of Data Sheet 1 Dec. 2008 • Modified Fig display Input Signal only • Updated Fig. 14, WiMAX Spectrum Mask Specification, to reflect the distortion free input test signal versus the distortion loaded output signal Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S27130HR3 MRF7S27130HSR3 11 ...

Page 12

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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