MRF7S19170HSR5 Freescale Semiconductor, MRF7S19170HSR5 Datasheet

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MRF7S19170HSR5

Manufacturer Part Number
MRF7S19170HSR5
Description
IC MOSFET RF N-CHAN NI-880S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S19170HSR5

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
17.2dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.4A
Voltage - Test
28V
Power - Output
50W
Package / Case
NI-880S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S19170HSR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1930 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1400 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Output Power
Operation
Case Temperature 80°C, 170 W CW
Case Temperature 72°C, 25 W CW
out
Power Gain — 17.2 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 170 Watts CW
out
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S19170H
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
MRF7S19170HR3 MRF7S19170HSR3
1930 - 1990 MHz, 50 W AVG., 28 V
MRF7S19170HSR3
MRF7S19170HR3
MRF7S19170HSR3
MRF7S19170HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
NI - 880
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.25
0.31
150
225
(2,3)
Rev. 1, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S19170HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S19170H ...

Page 2

... Vdc — 2.7 — Vdc 4 5.4 7.6 Vdc 0.1 0.15 0.3 Vdc — 0.9 — pF — 703 — Avg 1932.5 MHz and f = out 16 17 — % 5.7 6.2 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Part - to - Part Insertion Phase Variation @ 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) — continued C Symbol = 28 Vdc VBW = 170 W CW ...

Page 4

... Microstrip 0.160″ x 0.083″ Microstrip 1.120″ x 0.080″ Microstrip Taconic TLX - 0300, 0.030″, ε = 2.5 r Part Number Manufacturer ATC ATC ATC ATC TDK ATC ATC ATC ATC United Chemi - Con Vishay Vishay RF Device Data Freescale Semiconductor RF ...

Page 5

... Figure 2. MRF7S19170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 C8 C15 C16 C10 C11 C14 C13 C12 C17 C18 C9 MRF7S19170H Rev 0 MRF7S19170HR3 MRF7S19170HSR3 5 ...

Page 6

... Vdc 1955 MHz 1965 MHz = 700 mA 2100 mA 1050 mA 1750 mA 1400 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 400 ...

Page 7

... P , OUTPUT POWER (dBm) out Figure 10. Digital Predistortion Correction versus ACPR and Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Two−Tone Measurements −10 (f1 + f2)/2 = Center Frequency of 1960 MHz −20 −30 −40 IM7−U −50 IM7−L −60 400 1 Figure 8 ...

Page 8

... Figure 15. Single - Carrier W - CDMA Spectrum 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 32%. DD out D 3.84 MHz Channel BW −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −1.8 3.6 7.2 −3.6 0 1.8 5.4 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 250 9 ...

Page 9

... MHz Figure 16. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω load f = 1880 MHz Z source f = 2040 MHz f = 1880 MHz Vdc 1400 mA Avg out source load MHz W W 1880 1.338 - j7.859 0.967 - j2.868 1900 1.515 - j7.609 0.942 - j2.725 1920 1 ...

Page 10

... Figure 18. Pulsed CW Output Power Ideal P6dB = 55.27 dBm (336 W) Actual Vdc 1400 mA, Pulsed μsec(on), 10% Duty Cycle 1960 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source load Ω Ω 2.34 - j9.24 0.79 - j2.94 versus Input Power RF Device Data Freescale Semiconductor 45 ...

Page 11

... (FLANGE bbb bbb ccc (FLANGE (FLANGE bbb bbb ccc (FLANGE) RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) M ccc (LID) M aaa SEATING T PLANE CASE 465B - 03 ISSUE 880 MRF7S19170H M M (INSULATOR) ccc (LID) aaa SEATING PLANE CASE 465C - 02 ISSUE 880S MRF7S19170HS NOTES: 1 ...

Page 12

... Deleted output signal data from Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S19170HR3 MRF7S19170HSR3 12 PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for and added “Measured in GS(Q) 2 and listed RF Device Data Freescale Semiconductor ...

Page 13

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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