MRF7S21170HR5 Freescale Semiconductor, MRF7S21170HR5 Datasheet

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MRF7S21170HR5

Manufacturer Part Number
MRF7S21170HR5
Description
IC MOSFET RF N-CHAN NI-880
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S21170HR5

Transistor Type
N-Channel
Frequency
2.11GHz
Gain
16dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.4A
Voltage - Test
28V
Power - Output
50W
Package / Case
NI-880
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S21170HR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006--2008, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 2110 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1400 mA, P
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Output Power
Operation
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
out
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes -- AN1955.
@ 1 dB Compression Point ≃ 170 Watts CW
out
= 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
Document Number: MRF7S21170H
J
CASE 465B- -03, STYLE 1
CASE 465C- -02, STYLE 1
MRF7S21170HR3 MRF7S21170HSR3
2110- -2170 MHz, 50 W AVG., 28 V
MRF7S21170HSR3
MRF7S21170HR3
MRF7S21170HSR3
MRF7S21170HR3
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -880
NI- -880S
SINGLE W- -CDMA
-- 65 to +150
Value
--0.5, +65
--6.0, +10
32, +0
Value
0.31
0.36
150
225
(2,3)
Rev. 6, 3/2011
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S21170HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2006--2008, 2011. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S21170H MRF7S21170HSR3 2110- -2170 MHz AVG ...

Page 2

... Vdc — 2.7 — Vdc 4.5 5.4 6.5 Vdc 0.1 0.15 0.3 Vdc — 0.9 — pF — 703 — Avg 2167.5 MHz, out — % 5.7 6.1 — dB — --37 --35 dBc — --15 --9 dB (continued) RF Device Data Freescale Semiconductor ...

Page 3

... W CW 2140 MHz out Part--to--Part Insertion Phase Variation @ 2140 MHz, Six Sigma Window Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) A Symbol = 28 Vdc VBW = 50 W Avg ...

Page 4

... Microstrip 0.230″ x 0.083″ Microstrip 0.900″ x 0.080″ Microstrip Taconic TLX8--0300, 0.030″, ε =2.55 r Part Number Manufacturer ATC ATC ATC ATC ATC TDK Illinois Capacitor ATC ATC Vishay Vishay RF Device Data Freescale Semiconductor RF ...

Page 5

... Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C8 C10 C12 C17 C14 C15 C16 C18 C9 C11 C7 MRF7S21170H Rev 0 MRF7S21170HR3 MRF7S21170HSR3 5 ...

Page 6

... Figure 6. Third Order Intermodulation Distortion --5 0 --10 --1 --15 --2 --20 --3 --25 2200 2220 --5 --2 --10 --3 --15 --4 --20 --5 --25 2200 2220 = 28 Vdc 2135 MHz 2145 MHz 2100 mA = 700 mA 1400 mA 1750 mA 1050 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 400 ...

Page 7

... DPD Corrected, with Memory Correction -- OUTPUT POWER (dBm) out Figure 10. Digital Predistortion Correction versus ACPR and Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Two--Tone Measurements --10 (f1 + f2)/2 = Center Frequency of 2140 MHz --20 --30 --40 --50 IM5--L --60 100 400 1 Figure 8. Intermodulation Distortion Products -- ...

Page 8

... W- -CDMA TEST SIGNAL 10 0 --10 --20 --30 --40 --50 --60 --ACPR in 3.84 MHz --70 -- --90 --100 --9 --7.2 Figure 14. Single- -Carrier W- -CDMA Spectrum = 1400 280 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW Integrated BW --5.4 --3.6 --1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 7.2 9 ...

Page 9

... Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Ω 2220 MHz Z load f = 2060 MHz f = 2220 MHz Vdc 1400 mA Avg out source load MHz Ω Ω 2060 4.57 -- j10.70 1.02 -- j3.54 2080 4.57 -- j10.38 0.99 -- j3.34 2100 4.57 -- j10.06 ...

Page 10

... Figure 17. Pulsed CW Output Power Ideal P6dB = 54.88 dBm (307 W) Actual Vdc 1400 mA, Pulsed μsec(on), 10% Duty Cycle 2140 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source load Ω Ω 4.43 -- j11.85 0.72 -- j2.87 versus Input Power @ Device Data Freescale Semiconductor 44 45 ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S21170HR3 MRF7S21170HSR3 11 ...

Page 12

... MRF7S21170HR3 MRF7S21170HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF7S21170HR3 MRF7S21170HSR3 13 ...

Page 14

... MRF7S21170HR3 MRF7S21170HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

... Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, updated to include output power level at functional test Device Data Freescale Semiconductor REVISION HISTORY Description to On Characteristics table GG(Q) ...

Page 16

... Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MRF7S21170HR3 MRF7S21170HSR3 16 REVISION HISTORY (continued) Description value for V from 270 μAdc to 372 μAdc and V D GS(th) minimum and maximum values to match production GS(th) from DS(on) RF Device Data Freescale Semiconductor ...

Page 17

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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