MRF7S27130HSR3 Freescale Semiconductor, MRF7S27130HSR3 Datasheet

no-image

MRF7S27130HSR3

Manufacturer Part Number
MRF7S27130HSR3
Description
MOSFET RF N-CH 23W NI-780S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S27130HSR3

Transistor Type
N-Channel
Frequency
2.5GHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.5A
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S27130HSR3
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for WiMAX base station applications with frequencies up to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Output Power
Operation
Derate above 25°C
Case Temperature 80°C, 104 W CW
Case Temperature 69°C, 23 W CW
out
Power Gain — 16.5 dB
Drain Efficiency — 20%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
= 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM
C
= 25°C
(1,2)
Characteristic
DD
Rating
= 28 Volts, I
DQ
= 1500 mA,
3
/
4
,
Symbol
Symbol
R
V
V
V
CW
T
T
T
θJC
DS
GS
DD
stg
C
J
Document Number: MRF7S27130H
CASE 465- 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S27130HR3 MRF7S27130HSR3
2500 - 2700 MHz, 23 W AVG., 28 V
MRF7S27130HSR3
MRF7S27130HR3
MRF7S27130HSR3
MRF7S27130HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.83
0.32
0.36
150
225
150
WiMAX
(2,3)
Rev. 1, 12/2008
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

Related parts for MRF7S27130HSR3

MRF7S27130HSR3 Summary of contents

Page 1

... RF POWER MOSFETs CASE 465- 06, STYLE 780 MRF7S27130HR3 CASE 465A - 06, STYLE 780S MRF7S27130HSR3 Symbol Value Unit V - 0.5, +65 Vdc 6.0, +10 Vdc GS V 32, +0 Vdc +150 °C stg T 150 ° 225 ° 150 W 0.83 W/°C (2,3) Symbol Value Unit R °C/W θJC 0.32 0.36 MRF7S27130HR3 MRF7S27130HSR3 1 ...

Page 2

... Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S27130HR3 MRF7S27130HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I ...

Page 3

... MHz Bandwidth — 40 — — 1.2 — — 135 — — 1.5 — — 81.3 — — 0.013 — — 0.01 — MRF7S27130HR3 MRF7S27130HSR3 Unit dBc dB % rms MHz dB ° ns ° dB/°C dBm/°C 3 ...

Page 4

... C2, C6, C7, C8, C9, C10, C11 10 μ Chip Capacitors Chip Capacitor C4, C5 3.6 pF Chip Capacitors C12 470 μ Electrolytic Capacitor, Radial C13 5.6 pF Chip Capacitor R1 KΩ, 1/4 W Chip Resistors R3 10 Ω, 1/4 W Chip Resistor MRF7S27130HR3 MRF7S27130HSR3 4 Z18 C3 Z17 Z10 DUT Z19 Z11 Z12 ...

Page 5

... Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C12 C13 C11 C9 C5 C10 MRF7S27130H/HS Rev. 0 MRF7S27130HR3 MRF7S27130HSR3 5 ...

Page 6

... Vdc 1500 2595 MHz 2605 MHz Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S27130HR3 MRF7S27130HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 1500 mA DD out 802.16d, 64 QAM 4 Bursts, 7 MHz Channel Bandwidth 4, Input Signal PAR = 9 0.01% Probability on CCDF η ...

Page 7

... Tone Spacing −10 −30_C −15 25_C 85_C −20 85_C −25 −30 25_C −35 −30_C −40 − −30_C C −50 −55 25_C 85_C −60 −65 100 300 I = 1500 2600 MHz 100 125 150 P , OUTPUT POWER (WATTS) CW out MRF7S27130HR3 MRF7S27130HSR3 100 32 V 175 200 7 ...

Page 8

... QAM , 4 Bursts, 7 MHz 4 Channel Bandwidth, Input Signal 0.001 PAR = 9 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal MRF7S27130HR3 MRF7S27130HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 20%. DD out ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Test Network Z Z source load f = 2700 MHz f = 2500 MHz load Output Matching Network MRF7S27130HR3 MRF7S27130HSR3 9 ...

Page 10

... (FLANGE) D bbb (LID (FLANGE (FLANGE (LID (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S27130HR3 MRF7S27130HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc aaa ccc SEATING T PLANE CASE 465 - 06 ISSUE 780 MRF7S27130HR3 ccc aaa CASE 465A - 06 ISSUE 780S MRF7S27130HSR3 NOTES: 1 ...

Page 11

... Initial Release of Data Sheet 1 Dec. 2008 • Modified Fig display Input Signal only • Updated Fig. 14, WiMAX Spectrum Mask Specification, to reflect the distortion free input test signal versus the distortion loaded output signal Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S27130HR3 MRF7S27130HSR3 11 ...

Page 12

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S27130HR3 MRF7S27130HSR3 Document Number: MRF7S27130H Rev. 1, 12/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords