MRF7S21170HSR3 Freescale Semiconductor, MRF7S21170HSR3 Datasheet - Page 7

• Manufacturer Part Number: MRF7S21170HSR3
• Description: MOSFET N-CHAN 50W 28V NI-88OS
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21170HSR3

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W
• Power Gain (typ)@vds: 16dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: NI-880S
• Pin Count: 3
• Output Capacitance (typ)@vds: 703@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 31%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
--10
--20
--30
--40
--50
--60
--70
--20
--30
--40
--50
--60
40
1
Figure 10. Digital Predistortion Correction versus
Figure 7. Intermodulation Distortion Products
V
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
V
W--CDMA, Input Signal PAR = 7.5 dB, ACPR @ ±5 MHz
Offset in 3.84 MHz Integrated Bandwidth
DD
DPD Corrected
No Memory Correction
DD
41
= 28 Vdc, I
= 28 Vdc, I
42
P
Uncorrected, Upper and Lower
out
DQ
DQ
ACPR and Output Power
, OUTPUT POWER (WATTS) PEP
versus Output Power
43
P
= 1400 mA
= 1400 mA, f = 2140 MHz Single--Carrier
out
, OUTPUT POWER (dBm)
10
44
DPD Corrected, with Memory Correction
5th Order
3rd Order
45
--1
--2
--3
--4
--5
1
0
7th Order
20
46
--1 dB = 43.335 W
Compression (PARC) versus Output Power
Figure 9. Output Peak- -to- -Average Ratio
47
--2 dB = 61.884 W
100
TYPICAL CHARACTERISTICS
40
48
P
out
49
V
f = 2140 MHz, Input Signal PAR = 7.5 dB
, OUTPUT POWER (WATTS)
DD
= 28 Vdc, I
400
60
--3 dB = 83.111 W
50
DQ
19
18
17
16
15
14
13
= 1400 mA
80
1
--10
--20
--30
--40
--50
--60
Figure 11. Power Gain and Drain Efficiency
0
G
η
ps
D
1
Figure 8. Intermodulation Distortion Products
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
DD
IM5--L
100
= 28 Vdc, P
P
versus CW Output Power
out
T
IM5--U
, OUTPUT POWER (WATTS) CW
C
Actual
Ideal
= --30_C
IM7--U
25_C
out
versus Tone Spacing
85_C
TWO--TONE SPACING (MHz)
120
10
MRF7S21170HR3 MRF7S21170HSR3
= 170 W (PEP), I
54
48
42
36
30
24
18
IM7--L
V
I
f = 2140 MHz
10
DQ
IM3--U
IM3--L
DD
= 1400 mA
= 28 Vdc
DQ
= 1400 mA
100
--30_C
85_C
25_C
400
60
50
40
30
20
10
0
100
7