MRF8S21200HSR6 Freescale Semiconductor, MRF8S21200HSR6 Datasheet
MRF8S21200HSR6
Specifications of MRF8S21200HSR6
Related parts for MRF8S21200HSR6
MRF8S21200HSR6 Summary of contents
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... MRF8S21200HR6 MRF8S21200HSR6 2110- -2170 MHz AVG -CDMA, LTE LATERAL N- -CHANNEL RF POWER MOSFETs CASE 375D- -05, STYLE 1 NI- -1230 MRF8S21200HR6 CASE 375E- -04, STYLE 1 NI- -1230S MRF8S21200HSR6 out out (Top View) Figure 1. Pin Connections (2,3) Symbol Value Unit R °C/W θJC 0.31 0.27 MRF8S21200HR6 MRF8S21200HSR6 / ...
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... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 2110 MHz 2140 MHz 2170 MHz 1. Part internally matched both on input and output. MRF8S21200HR6 MRF8S21200HSR6 2 = 25°C unless otherwise noted) Symbol I DSS I ...
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... A Symbol = 28 Vdc IMD sym VBW res = 48 W Avg. G out F ∆G ∆P1dB Min Typ Max = 1400 mA, 2110--2170 MHz Bandwidth — 8 — — 35 — — 0.4 — — 0.02 — — 0.02 — MRF8S21200HR6 MRF8S21200HSR6 Unit MHz MHz dB dB/°C dB/°C 3 ...
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... Chip Capacitor C9 0.8 pF Chip Capacitor C10 0.3 pF Chip Capacitor C18 470 μ Electrolytic Capacitor R1 22 Ω, 1/4 W Chip Resistor R2 Ω, 1/4 W Chip Resistors R4 Ω Chip Resistors PCB 0.030″, ε MRF8S21200HR6 MRF8S21200HSR6 Description ATC100B8R2CT500XT ATC100B0R2BT500XT ATC100B0R6BT500XT C5750X5R1H106MT ATC100B0R5BT500XT ATC100B0R8BT500XT ATC100B0R3BT500XT ...
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... OUTPUT POWER (WATTS) out Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --34 --8 0 --34.8 --9.8 --0.5 --35.6 --11.6 --1 --36.4 --13.4 --1.5 --37.2 --15.2 --2 --38 --17 --2.5 2200 2220 100 --20 48 η --25 ACPR 38 --30 33 --35 -- --45 23 PARC --50 18 100 120 MRF8S21200HR6 MRF8S21200HSR6 5 ...
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... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S21200HR6 MRF8S21200HSR6 6 TYPICAL CHARACTERISTICS = 28 Vdc 1400 2140 MHz 2170 MHz 2170 MHz 2140 MHz 2110 MHz 2110 MHz 2140 MHz ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF8S21200HR6 MRF8S21200HSR6 7 ...
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... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S21200HR6 MRF8S21200HSR6 Vdc 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 2170 MHz f = 2110 MHz f = 2170 MHz f = 2110 MHz f = 2140 MHz INPUT POWER (dBm) in P1dB ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S21200HR6 MRF8S21200HSR6 9 ...
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... MRF8S21200HR6 MRF8S21200HSR6 10 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF8S21200HR6 MRF8S21200HSR6 11 ...
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... MRF8S21200HR6 MRF8S21200HSR6 12 RF Device Data Freescale Semiconductor ...
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... Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of the device Device Data Freescale Semiconductor REVISION HISTORY Description @ 1 dB Compression Point bullet from p. 1, and P1dB from the Typical Performance out MRF8S21200HR6 MRF8S21200HSR6 13 ...
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... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S21200HR6 MRF8S21200HSR6 Document Number: MRF8S21200H Rev. 2, 10/2010 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...