MRFE6S9205HSR3 Freescale Semiconductor, MRFE6S9205HSR3 Datasheet
MRFE6S9205HSR3
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MRFE6S9205HSR3 Summary of contents
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... SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRFE6S9205HR3 CASE 465C - 02, STYLE 880S MRFE6S9205HSR3 Symbol Value Unit V - 0.5, +66 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.27 0.33 MRFE6S9205HR3 MRFE6S9205HSR3 1 ...
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... Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 7 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched on input. MRFE6S9205HR3 MRFE6S9205HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Min Typ Max = 1400 mA, 865 - 900 MHz Bandwidth — 10 — — 0.315 — — 0.59 — — 4.27 — — 26.3 — — 0.016 — — 0.006 — MRFE6S9205HR3 MRFE6S9205HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... C6, C17, C18, C19, C23, 10 μ Chip Capacitors C24, C25 C8, C9, C10, C11, C12, C13 6.8 pF Chip Capacitors C20, C26 470 μ Electrolytic Capacitors R1, R3 3.3 Ω, 1/3 W Chip Resistors R2 2.2 kΩ, 1/4 W Chip Resistor MRFE6S9205HR3 MRFE6S9205HSR3 4 C21 C22 Z10 Z11 Z12 Z6 ...
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... Figure 2. MRFE6S9205HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C21 C12 C10 MRFE6S9205H C26 C23 C24 C22 C25 C13 C14 C27 C11 C19 C15 C16 C17 C18 C20 Rev. 1 MRFE6S9205HR3 MRFE6S9205HSR3 5 ...
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... Vdc 875 MHz 885 MHz DD 700 mA Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRFE6S9205HR3 MRFE6S9205HSR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg out I = 1400 mA, Single−Carrier DQ W−CDMA, 3.84 MHz, Channel Bandwidth, Input PAR = 7 ...
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... Figure 10. Power Gain and Drain Efficiency versus CW Output Power = 28 Vdc 220 W (PEP 1400 mA out DQ IM3−U IM3−L IM5−U IM5−L IM7−U IM7−L 10 TWO−TONE SPACING (MHz) versus Output Power Actual 100 110 70 −30_C 85_C 400 MRFE6S9205HR3 MRFE6S9205HSR3 100 7 ...
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... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 Input PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRFE6S9205HR3 MRFE6S9205HSR3 8 TYPICAL CHARACTERISTICS 1400 880 MHz ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load W Output Matching Network MRFE6S9205HR3 MRFE6S9205HSR3 9 ...
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... M M (INSULATOR) bbb (LID) ccc (FLANGE (FLANGE bbb (INSULATOR) bbb (LID) ccc (FLANGE) MRFE6S9205HR3 MRFE6S9205HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (LID) ccc (INSULATOR) aaa SEATING T PLANE CASE 465B - 03 ISSUE 880 MRFE6S9205HR3 R (LID) ccc (INSULATOR) aaa SEATING PLANE CASE 465C - 02 ISSUE 880S MRFE6S9205HSR3 NOTES: 1 ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Oct. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFE6S9205HR3 MRFE6S9205HSR3 11 ...
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... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFE6S9205HR3 MRFE6S9205HSR3 Document Number: MRFE6S9205H Rev. 0, 10/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...