MRFE6S9200HSR3 Freescale Semiconductor, MRFE6S9200HSR3 Datasheet - Page 6

• Manufacturer Part Number: MRFE6S9200HSR3
• Description: MOSFET RF N-CH 58W 28V NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9200HSR3

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 21dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 58W
• Package / Case: NI-880S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 58W
• Power Gain (typ)@vds: 21dB
• Frequency (max): 1GHz
• Package Type: NI-880S
• Pin Count: 3
• Input Capacitance (typ)@vds: 557.27@28VpF
• Output Capacitance (typ)@vds: 74.61@28VpF
• Reverse Capacitance (typ): 2.41@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 35%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRFE6S9200HR3 MRFE6S9200HSR3
6
−30
−40
−50
−60
−70
−70
−10
−20
−30
−40
−50
−60
38
Figure 10. Digital Predistortion Correction versus
1
Figure 7. Intermodulation Distortion Products
Uncorrected, Upper and Lower
V
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
V
Single−Carrier W−CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
DPD Corrected
No Memory Correction DPD Corrected, with
DD
DD
39
= 28 Vdc, I
= 28 Vdc, I
40
P
out
41
DQ
ACPR and Output Power
DQ
, OUTPUT POWER (WATTS) PEP
P
versus Output Power
out
= 1400 mA
= 1400 mA, f = 880 MHz
, OUTPUT POWER (dBm)
42
10
Memory Correction
5th Order
43
3rd Order
7th Order
44
−1
−2
−3
−4
−5
1
0
45
50
−1 dB = 59.7 W
Compression (PARC) versus Output Power
100
46
Figure 9. Output Peak - to - Average Ratio
TYPICAL CHARACTERISTICS
60
47
−2 dB = 82.5 W
P
48
70
out
, OUTPUT POWER (WATTS)
49
600
80
V
f = 880 MHz, Input PAR = 7.5 dB
DD
= 28 Vdc, I
24
23
22
21
20
19
18
17
16
0.1
90
−10
−20
−30
−40
−50
−60
−70
Figure 11. Power Gain and Drain Efficiency
−3 dB = 115 W
1
Figure 8. Intermodulation Distortion Products
DQ
G
η
IM7−U
IM7−L
ps
D
100
= 1400 mA
P
versus CW Output Power
out
1
, OUTPUT POWER (WATTS) CW
110
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Actual
Ideal
DD
versus Tone Spacing
TWO−TONE SPACING (MHz)
T
C
= 28 Vdc, P
120
= −30_C
IM3−U
60
55
50
45
40
35
30
25_C
85_C
IM5−L
10
10
out
IM3−L
= 240 W (PEP), I
Freescale Semiconductor
V
I
f = 880 MHz
DQ
DD
IM5−U
= 1400 mA
= 28 Vdc
100
−30_C
RF Device Data
DQ
= 1400 mA
85_C
25_C
600
80
70
60
50
40
30
20
10
0
100